A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application

2021 Symposium on VLSI Circuits ◽

10.23919/vlsicircuits52068.2021.9492384 ◽

2021 ◽

Author(s):

Hyunjin Shin ◽

Myeonghee Oh ◽

Jaeseung Choi ◽

Taejoong Song ◽

Jongwook Kye

Keyword(s):

Flash Memory ◽

Automotive Application ◽

Read Operation ◽

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A Vertical Split-Gate Flash Memory Featuring High-Speed Source-Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing-In-Memory (CIM)

2020 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm13553.2020.9372036 ◽

2020 ◽

Author(s):

Tzu-Hsuan Hsu ◽

Hang-Ting Lue ◽

Po-Kai Hsu ◽

Teng-Hao Yeh ◽

Pei-Ying Du ◽

...

Keyword(s):

Flash Memory ◽

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Applications and Technology Trend in Embedded Flash Memory

Integrated Circuits and Systems - Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations ◽

10.1007/978-3-319-55306-1_2 ◽

2017 ◽

pp. 7-27

Author(s):

Hideto Hidaka

Keyword(s):

Flash Memory ◽

Technology Trend ◽

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A Capacitor Dielectric Relaxation Effect Cancellation Circuit in a 12-Bit, 1-MSps, 5.0-V SAR ADC on a 28-nm Embedded Flash Memory Microcontroller

IEEE Solid-State Circuits Letters ◽

10.1109/lssc.2019.2931606 ◽

2019 ◽

Vol 2 (9) ◽

pp. 95-98

Author(s):

Tetsuo Matsui ◽

Keisaku Sento ◽

Tomohiko Ebata ◽

Atsuhiko Ishibashi

Keyword(s):

Dielectric Relaxation ◽

Flash Memory ◽

Relaxation Effect ◽

Sar Adc ◽

Embedded Flash ◽

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Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory

Solid State Phenomena - Advances in Nanomaterials and Processing ◽

10.4028/3-908451-31-0.29 ◽

2007 ◽

pp. 29-32

Author(s):

Nam Hoon Kim ◽

Hae Young Yoo ◽

Eui Goo Chang

Keyword(s):

Flash Memory ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

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Evolution of embedded flash memory technology for MCU

2011 IEEE International Conference on IC Design & Technology ◽

10.1109/icicdt.2011.5783209 ◽

2011 ◽

Author(s):

Hideto Hidaka

Keyword(s):

Flash Memory ◽

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Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)

IEICE Transactions on Electronics ◽

10.1093/ietele/e91-c.5.731 ◽

2008 ◽

Vol E91-C (5) ◽

pp. 731-735 ◽

Author(s):

S. CHO ◽

I. H. PARK ◽

J. H. LEE ◽

J.-G. YUN ◽

D.-H. KIM ◽

...

Keyword(s):

Flash Memory ◽

Memory Devices ◽

Read Operation ◽

Pillar Structure ◽

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A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

2012 Symposium on VLSI Circuits (VLSIC) ◽

10.1109/vlsic.2012.6243824 ◽

2012 ◽

Author(s):

Seung-Hwan Song ◽

Ki Chul Chun ◽

Chris H. Kim

Keyword(s):

High Voltage ◽

Flash Memory ◽

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Low-cost embedded Flash memory technology

2011 IEEE International Conference on IC Design & Technology ◽

10.1109/icicdt.2011.5783211 ◽

2011 ◽

Author(s):

Wein-Town Sun ◽

Cheng-Jye Liu ◽

Chun-Yuan Lo ◽

Yun-Jen Ting ◽

Ying-Je Chen ◽

...

Keyword(s):

Flash Memory ◽

Low Cost ◽

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90nm Node 1T Floating Gate Embedded Flash Memory with Precharge NMOS Transistor

Proceedings of the Second International Conference on Information and Communication Technology for Competitive Strategies - ICTCS '16 ◽

10.1145/2905055.2905255 ◽

2016 ◽

Author(s):

Padma Prasada ◽

Sathisha ◽

H. D. Ranjith

Keyword(s):

Flash Memory ◽

Floating Gate ◽

Nmos Transistor ◽

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High program efficiency of p-type floating gate in n-channel split-gate embedded flash memory

Applied Physics Letters ◽

10.1063/1.3023057 ◽

2008 ◽

Vol 93 (21) ◽

pp. 213503 ◽

Author(s):

Hung-Sheng Shih ◽

Shang-Wei Fang ◽

An-Chi Kang ◽

Ya-Chin King ◽

Chrong-Jung Lin

Keyword(s):

Flash Memory ◽

Floating Gate ◽

Program Efficiency ◽

P Type ◽

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