embedded flash Latest Research Papers

A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application

2021 Symposium on VLSI Circuits ◽

10.23919/vlsicircuits52068.2021.9492384 ◽

2021 ◽

Author(s):

Hyunjin Shin ◽

Myeonghee Oh ◽

Jaeseung Choi ◽

Taejoong Song ◽

Jongwook Kye

Keyword(s):

Flash Memory ◽

Automotive Application ◽

Read Operation ◽

Embedded Flash

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Fabrication and Evaluation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for Embedded Flash

10.23919/iwjt52818.2021.9609490 ◽

2021 ◽

Author(s):

Y. Z. Wang ◽

A. Amo ◽

E. Tsukuda ◽

K. Sonoda ◽

R. Ogura ◽

...

Keyword(s):

Nonvolatile Memory ◽

Charge Trapping ◽

High K ◽

Embedded Flash

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Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application

2021 IEEE International Memory Workshop (IMW) ◽

10.1109/imw51353.2021.9439602 ◽

2021 ◽

Author(s):

Jaehun Lee ◽

Youngcheon Jeong ◽

Kyongsik Yeom ◽

Changmin Jeon ◽

Jongsung Woo ◽

...

Keyword(s):

High Speed ◽

Process Development ◽

High Density ◽

Embedded Flash

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Internal Task-Aware Command Scheduling to Improve Read Performance of Embedded Flash Storage Systems

IEEE Access ◽

10.1109/access.2021.3079520 ◽

2021 ◽

pp. 1-1

Author(s):

Gyeongyong Lee ◽

Jaewook Kwak ◽

Joonyong Jeong ◽

Daeyong Lee ◽

Moonseok Jang ◽

...

Keyword(s):

Storage Systems ◽

Flash Storage ◽

Embedded Flash

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A Vertical Split-Gate Flash Memory Featuring High-Speed Source-Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing-In-Memory (CIM)

2020 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm13553.2020.9372036 ◽

2020 ◽

Author(s):

Tzu-Hsuan Hsu ◽

Hang-Ting Lue ◽

Po-Kai Hsu ◽

Teng-Hao Yeh ◽

Pei-Ying Du ◽

...

Keyword(s):

Flash Memory ◽

High Speed ◽

Embedded Flash

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A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2019.2939160 ◽

2020 ◽

Vol 67 (8) ◽

pp. 1454-1458

Author(s):

Wenyi Zhu ◽

Jianwei Jiang ◽

Haineng Zhang ◽

Yiran Xu ◽

Jun Xiao ◽

...

Keyword(s):

Flash Memory ◽

Supply Voltage ◽

Amplifier Circuit ◽

Sense Amplifier ◽

Wide Range ◽

Embedded Flash

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A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

2020 IEEE Symposium on VLSI Circuits ◽

10.1109/vlsicircuits18222.2020.9162813 ◽

2020 ◽

Author(s):

Hoyoung Shin ◽

Jisung Kim ◽

Shinwuk Kang ◽

Sungung Kwak

Keyword(s):

High Temperature ◽

Low Power ◽

Flash Memory ◽

Supply Voltage ◽

Ultra Low Power ◽

Embedded Flash

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Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash

2020 IEEE International Memory Workshop (IMW) ◽

10.1109/imw48823.2020.9108134 ◽

2020 ◽

Author(s):

Y. Z. Wang ◽

A. Amo ◽

K. Maekawa ◽

K. Uchimura ◽

K. Sonoda ◽

...

Keyword(s):

Nonvolatile Memory ◽

High Speed ◽

Charge Trapping ◽

High K ◽

Embedded Flash

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A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications

IEEE Solid-State Circuits Letters ◽

10.1109/lssc.2020.2979448 ◽

2020 ◽

Vol 3 ◽

pp. 58-61 ◽

Cited By ~ 1

Author(s):

Ken Matsubara ◽

Tsutomu Nagasawa ◽

Yoshinobu Kaneda ◽

Hidenori Mitani ◽

Takashi Iwase ◽

...

Keyword(s):

Iot Applications ◽

Embedded Flash

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Exploiting Exclusive Higher Resolution to Enhance Response Time of Embedded Flash Storage

Proceedings of the 15th International Conference on Software Technologies ◽

10.5220/0009859804700477 ◽

2020 ◽

Author(s):

Jung-Hoon Kim ◽

Young-Sik Lee

Keyword(s):

Response Time ◽

Flash Storage ◽

Embedded Flash

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embedded flash
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application

Fabrication and Evaluation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for Embedded Flash

Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application

Internal Task-Aware Command Scheduling to Improve Read Performance of Embedded Flash Storage Systems

A Vertical Split-Gate Flash Memory Featuring High-Speed Source-Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing-In-Memory (CIM)

A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory

A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash

A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications

Exploiting Exclusive Higher Resolution to Enhance Response Time of Embedded Flash Storage

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embedded flashRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application

Fabrication and Evaluation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for Embedded Flash

Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application

Internal Task-Aware Command Scheduling to Improve Read Performance of Embedded Flash Storage Systems

A Vertical Split-Gate Flash Memory Featuring High-Speed Source-Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing-In-Memory (CIM)

A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory

A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash

A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications

Exploiting Exclusive Higher Resolution to Enhance Response Time of Embedded Flash Storage

embedded flash
Recently Published Documents