Possible Enhancement of Modulation Rate for Light Emitting Diodes in Wireless Optical Data Transfer Networks by Means of Metal Nanoparticles with a Dielectric Shell

2020 ◽  
Vol 25 (2) ◽  
pp. 103-113
Author(s):  
D.V. Guzatov ◽  
◽  
S.V. Gaponenko ◽  
O.I. Tevel ◽  
◽  
...  
2005 ◽  
Vol 98 (9) ◽  
pp. 093504 ◽  
Author(s):  
L. B. Chang ◽  
D. H. Yeh ◽  
L. Z. Hsieh ◽  
S. H. Zeng

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 993
Author(s):  
Chen-Min Yang ◽  
Fang-Chung Chen

Metal nanoparticles have been widely used for improving the efficiencies of many optoelectronic devices. Herein, position effects of gold nanoparticles (Au NPs) on the performance of perovskite light-emitting diodes (PeLEDs) are investigated. Amphiphilic Au NPs are synthesized so that they can be incorporated into different layers of the PeLEDs to enhance device efficiencies. The photoluminescent (PL) studies indicate apparent position effects; the strongest PL intensity occurs when the NPs are directly blended with the light-emitting perovskite layer. In contrast, the PeLEDs exhibit the highest luminance efficiency while the Au NPs are placed in the hole-transporting layer. The direct blending of the NPs in the perovskite layer might affect the electrical properties, resulting in inferior device performance. The results reported herein can help to understand the enhancing mechanism of the PeLEDs and may also lead to even better efficiencies in the near future.


2006 ◽  
Vol 45 (9A) ◽  
pp. 6911-6913 ◽  
Author(s):  
Li-Zen Hsieh ◽  
Der-Hwa Yeh ◽  
Liann-Be Chang ◽  
Ta-Wei Soong ◽  
Ping-Yu Kuei

2008 ◽  
Vol 26 (7) ◽  
pp. 816-823 ◽  
Author(s):  
Martin Punke ◽  
Sebastian Valouch ◽  
Siegfried W. Kettlitz ◽  
Martina Gerken ◽  
Uli Lemmer

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


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