scholarly journals The Ettingshausen effect in doped semiconductor superlattice under the influence of confined optical phonon

2020 ◽  
Vol 36 (3) ◽  
Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Laser Radiation ◽  
Quantum Number ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Resonance Condition ◽  
Numerical Results ◽  
Phonon Confinement ◽  
Semiconductor Superlattice ◽  
Ettingshausen Effect

The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons, most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover, in comparison with the case of unconfined optical phonon, under the influence of phonon confinement effect, the Ettingshausen coefficient changes in magnitude, the number and position of resonance peaks.

scholarly journals The Calculation of the Ettingshausen Coefficient in Quantum Wells under the Influence of Confined Phonons (for Electron – confined Optical Phonon Scattering)

2019 ◽  
Vol 35 (2) ◽  
Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Kinetic Equation ◽  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Number ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Resonance Condition ◽  
Constant Electric Field ◽  
Quantum Kinetic Equation

Abstract: In this paper, we have used the method of quantum kinetic equation to calculate the analytic expression for Ettingshausen coefficient (EC) under the influence of confined phonon. We considered a quantum well in the presence of constant electric field, magnetic field and electromagnetic wave (EMW) with assumption that electron – confined optical phonon (OP) scattering is essential. The EC obtained depends on many quantities in a complicated way such as temperature, magnetic field, frequency or amplitude of EMW and m - quantum number which specify confined OP. Numerical results for GaAs/GaAsAl quantum well (QW) have displayed clearly the differences in comparison with both cases of bulk semiconductor and unconfined phonon. The result of examining the EC’s dependence on magnetic field shows that quantum number m changes resonance condition; m not only makes the increase in the number of resonance peak but also changes the position of peaks. When m is set to zero, we get the results that corresponds to unconfined OP. Keywords: Quantum well, Ettingshausen effect, Quantum kinetic equation, confined optical phonons.

scholarly journals Influence of Confined Phonons on the Hall Coefficient in a Cylindrycal Quantum wire with an infinite potential (for electron – confined optical phonon scattering)

2019 ◽  
Vol 35 (3) ◽  
Author(s):  
Pham Ngoc Thang ◽  
Le Thai Hung ◽  
Do Tuan Long ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Hall Coefficient ◽  
Optical Phonon ◽  
Quantum Wire ◽  
Phonon Scattering ◽  
Constant Electric Field ◽  
Optical Phonons ◽  
Phonon Confinement ◽  
Optical Phonon Scattering ◽  
Analytical Expressions

The influence of confined optical phonons on the Hall Coefficient (HC) in a Cylindrycal Quantum Wire (CQW) with an infinite potential (for electron – confined optical phonons scattering). Consider a case where CQW is placed in a perpendicular magnetic field , a constant - electric field  and an intense electromagnetic wave . By using the quantum kinetic equation for electrons interacting with Confined Optical Phonon (COP), we obtain analytical expressions for (HC), which are different from in comparison to those obtained for the HC in the case of normal bulk semiconductor and in the case of cylindrycal quantum wire with electron – unconfined phonons scattering mechanism. Numerical calculations are also applied for AlGaAs/GaAs/AlGaAs cylindrycal quantum wire, we see the HC depends on magnetic field B, temperature T, frequency Ω and amplitude E0 of laser radiation and especially quantum index m1 and m2 characterizing the phonon confinement. This influence is due to the quantum index m1 and m2, which makes an increase of Hall coefficient by 2,3 times in comparition with the case of unconfined phonons. When the quantum number m1 and m2 goes to zero, the result is the same as in the case of unconfined phonons.

One-dimensional cylindrical quantum wire: The theoretical study of photo-stimulated Ettingshausen effect

2021 ◽  
Author(s):  
Hoang Van Ngoc ◽  
Nguyen Quang Bau ◽  
Doan Minh Quang ◽  
Tran Hai Hung
Keyword(s):  
Magnetic Field ◽  
Optical Phonon ◽  
Quantum Wire ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Resonance Effect ◽  
One Dimensional ◽  
Ettingshausen Effect ◽  
Electron Acoustic ◽  
The Impact

Based on the quantum kinetic equation (QKE) for electron, we have theoretically studied the theory of photo-stimulated Ettingshausen effect in a one-dimensional cylindrical quantum wire (CQW). The strong electromagnetic wave (EMW) [Formula: see text] plays a role as photo-stimulation source. We obtain the analytic expressions for the kinetic tensors [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text] and the Ettingshausen coefficient (EC) in the CQW with the dependence on the amplitude and the energy of EMW, the CQW radius, the magnetic field and the temperature for two cases: optical phonon and acoustic phonon. The results are numerically evaluated and graphed for GaAs/AlGaAs CQW model. It is shown that we observe the cyclotron resonance and magneto-phonon resonance effect while surveying EC in terms of magnetic field (with and without EMW) and EMW energy, considered the electron-optical phonon scattering. In case of electron-acoustic phonon scattering, the oscillation of EC is obtained with the transition between low Landau levels (LLs). We also clarify the impact of quantum size effect (QSE) on EC by surveying the influence of EC on the radius of CQW.

The Temperature Dependence of Optical Phonon Scattering in Graphene under Strong Magnetic Field

2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Strong Magnetic Field ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Optical Phonon Scattering

Effect of Phonon Confinement on Intersubband Lasing Lifetimes of Si/SiGe Quantum Well Structures

1995 ◽  
Vol 402 ◽  
Author(s):  
L. Friedman ◽  
G. Sun
Keyword(s):  
Optical Phonon ◽  
Population Inversion ◽  
Phonon Scattering ◽  
Energy Difference ◽  
Polar Optical Phonon ◽  
Phonon Confinement ◽  
Quantum Well Structures ◽  
Laser Gain ◽  
Optical Phonon Scattering ◽  
Order Of Magnitude

AbstractThe feasibility of population inversion is studied for the Si/SiGe system. Because of the absence of polar optical phonon scattering, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, are an order of magnitude larger than in the III-Vs; nor does this show the large decrease to negative values (loss of population inversion) when the intersuband energy difference exceeds the optical phonon energy. We have investigated the effect of phonon confinement of the Ge-Ge and Si-Ge vibrations on the intersubband scattering rates and find a furthur enhancement of the the intersubband lifetimes as compared to those due to unconfined phonons.

Optical phonon scattering in quantum cascade laser in a magnetic field

2010 ◽  
Author(s):  
Y. Chen ◽  
N. Regnault ◽  
R. Ferreira ◽  
B. F. Zhu ◽  
G. Bastard ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Cascade Laser ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Quantum Cascade ◽  
Optical Phonon Scattering
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