scholarly journals The quantum Ettingshausen effect in parabolic quantum wells with in-plane magnetic field in the presence of laser radiation under the influence of confined optical phonon

2020 ◽  
Vol 1506 ◽  
pp. 012012
Author(s):  
Quynh Nguyen Thi Lam ◽  
Huong Nguyen Thu ◽  
Duc Nguyen Ba ◽  
Bau Nguyen Quang
Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau

The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons, most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover, in comparison with the case of unconfined optical phonon, under the influence of phonon confinement effect, the Ettingshausen coefficient changes in magnitude, the number and position of resonance peaks.


2000 ◽  
Vol 42 (9) ◽  
pp. 1734-1737
Author(s):  
É. P. Sinyavskii ◽  
S. M. Sokovnich

2000 ◽  
Vol 53 (1) ◽  
pp. 119 ◽  
Author(s):  
John F. Dobson ◽  
Jun Wang ◽  
Hung M. Le

We discuss two possible lines of experimental investigation based on parabolic quantum wells. In the first proposal, we note that the Generalised Kohn Theorem/Harmonic Potential Theorem forbids electron–electron damping of the Kohn mode in an electron layer gas under strictly parabolic confinement. This applies even for very strong driving. It is therefore interesting to attempt reduction of other sources of broadening in GaAlAs parabolic wells, so as to achieve a prominent narrow resonance in the far infrared. We concentrate here on phononic bandgap structures, which may be of interest for reduction of phonon effects in other systems as well. The second class of proposed experiment involves twinned parabolic wells in an attempt to observe van der Waals forces directly in GaAlAs systems. In a first approximation, the parabolic or Hooke's-law nature of the confinement allows one to use the well as a kind of spring balance to measure the weak van der Waals force. The influence of an applied magnetic field on these forces appears to be significant, and this system might provide the first measurement of such an effect.


Author(s):  
Nguyen Dinh Hien

We investigate the influence of optical phonon confinement described by Huang-Zhu (HZ) model on the optically detected electrophonon resonance (ODEPR) effect and ODEPR linewidth (ODEPRLW) in parabolic quantum wells (PQW) by using the operator projection. The obtained numerical result for the GaAs/AlAs parabolic quantum well shows that the ODEPR linewidths depend on the well's confinement frequency. Besides, in the two cases of confined and bulk phonons, the linewidth (LW) increases with the increase of confinement frequency. Furthermore, in the large range of the confinement frequency, the influence of phonon confinement plays an important role and cannot be neglected in considering the ODEPR linewidth.


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