scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

Chemical Vapor Deposition of Boron Nitride Thin Films on SiC

2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Gas Phase ◽  
Recent Work ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electric Properties ◽  
Rhombohedral Boron ◽  
Xrd And Tem

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Low Temperature Chemical Vapor Deposition of Hafnium Nitride−Boron Nitride Nanocomposite Films

2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocomposite Films ◽  
Hafnium Nitride

scholarly journals Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor
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