scholarly journals Thermal chemical vapor deposition of epitaxial rhombohedral boron nitride from trimethylboron and ammonia

2019 ◽  
Vol 37 (2) ◽  
pp. 020603 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.


2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.


2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.


2008 ◽  
Vol 19 (45) ◽  
pp. 455605 ◽  
Author(s):  
Chee Huei Lee ◽  
Jiesheng Wang ◽  
Vijaya K Kayatsha ◽  
Jian Y Huang ◽  
Yoke Khin Yap

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