Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated by helium ions with energy 5 MeV
2020 ◽
Vol 129
(1D)
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Keyword(s):
This paper focuses on researching the change in the volt-farad characteristic of the Al/SiO2/n-Si structure irradiated by helium ions with the energy of 5 MeV in different frequencies of 1 kHz; 10 kHz; 100 kHz and 1 MHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured by LCR Agilent E4980A and Agilent 4285A meter. The complex electrical module’s hodograph of irradiated structure shows that there is a formation of quasi-continuous radiation-disturbed layer at fluence 1012 cm-2 with U < -7 V and at 1013 cm-2 with U < -20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.
1967 ◽
Vol 31
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pp. 171-172
Keyword(s):
1984 ◽
Vol 75
◽
pp. 203-209
Keyword(s):
1983 ◽
Vol 41
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pp. 708-709
1986 ◽
Vol 44
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pp. 392-393
2020 ◽
Vol 92
(2)
◽
pp. 20701
Keyword(s):