The Voltage Dependence of Reverse Current of Semiconductor PN Junctions and its Distribution over the Device Area

2007 ◽  
Author(s):  
Vasile V.N. Obreja
Keyword(s):  
Voltage Dependence ◽  
Reverse Current ◽  
Pn Junctions

scholarly journals Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated by helium ions with energy 5 MeV

2020 ◽  
Vol 129 (1D) ◽  
Author(s):  
Vo Quang Nha ◽  
Le Vinh Thang ◽  
Huynh Thi Thuy Linh ◽  
Gorbachuk Nikolai Ivanovich ◽  
Ngo Xuan Cuong
Keyword(s):  
Frequency Dependence ◽  
Voltage Dependence ◽  
Charged Particles ◽  
Reverse Current ◽  
Helium Ions ◽  
Continuous Radiation ◽  
Disturbed Layer ◽  
Agilent E4980a

This paper focuses on researching the change in the volt-farad characteristic of the Al/SiO2/n-Si structure irradiated by helium ions with the energy of 5 MeV in different frequencies of 1 kHz; 10 kHz; 100 kHz and 1 MHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured by LCR Agilent E4980A and Agilent 4285A meter. The complex electrical module’s hodograph of irradiated structure shows that there is a formation of quasi-continuous radiation-disturbed layer at fluence 1012 cm-2 with U < -7 V and at 1013 cm-2 with U < -20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.

Prospective Transient Recovery Voltage Measurement of Short Circuit Testing Circuit by Reverse Current Injection

2019 ◽  
Vol 139 (8) ◽  
pp. 522-526
Author(s):  
Kyoya Nonaka ◽  
Tadashi Koshizuka ◽  
Eiichi Haginomori ◽  
Hisatoshi Ikeda ◽  
Takeshi Shinkai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Reverse Current ◽  
Current Injection ◽  
Voltage Measurement ◽  
Circuit Testing ◽  
Transient Recovery Voltage ◽  
Recovery Voltage

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Power Supply Voltage Dependence of Within-Die Delay Variation of Regular Manual Layout and Irregular Place-and-Route Layout

2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI
Keyword(s):  
Power Supply ◽  
Voltage Dependence ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Place And Route ◽  
Delay Variation

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

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