Developments and applications of tunneling magnetoresistance sensors

Achieving high tunneling magnetoresistance (TMR) in molecular-scale junctions is attractive for their applications in spintronics. By using density-functional theory (DFT) in combination with the nonequilibrium Green's function (NEGF) method, we...

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Tunneling magnetoresistance and spin-valley polarization in magnetic silicene superlattices

Physical Review B ◽

10.1103/physrevb.103.155431 ◽

2021 ◽

Vol 103 (15) ◽

Author(s):

J. G. Rojas-Briseño ◽

M. A. Flores-Carranza ◽

P. Villasana-Mercado ◽

S. Molina-Valdovinos ◽

I. Rodríguez-Vargas

Keyword(s):

Tunneling Magnetoresistance ◽

Valley Polarization

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Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/5.0051905 ◽

2021 ◽

Vol 130 (3) ◽

pp. 033901

Author(s):

Dhritiman Bhattacharya ◽

Peng Sheng ◽

Md Ahsanul Abeed ◽

Zhengyang Zhao ◽

Hongshi Li ◽

...

Keyword(s):

Acoustic Wave ◽

Surface Acoustic Wave ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Wave Induced

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Resonant tunneling effect and tunneling magnetoresistance in GaMnAs quantum-well double-barrier heterostructures

physica status solidi (c) ◽

10.1002/pssc.200672882 ◽

2006 ◽

Vol 3 (12) ◽

pp. 4184-4187 ◽

Cited By ~ 10

Author(s):

S. Ohya ◽

P. N. Hai ◽

Y. Mizuno ◽

M. Tanaka

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Tunneling Effect ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Resonant Tunneling Effect

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MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004795 ◽

2007 ◽

Vol 17 (03) ◽

pp. 593-598 ◽

Cited By ~ 1

Author(s):

N. N. BELETSKII ◽

S. A. BORYSENKO ◽

V. M. YAKOVENKO ◽

G. P. BERMAN ◽

S. A. WOLF

Keyword(s):

Current Density ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Electron Current ◽

Ferromagnetic Electrode ◽

Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

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