scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

scholarly journals Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 339 ◽  
Author(s):  
Gene Siegel ◽  
Gordon Gryzbowcki ◽  
Albert Hilton ◽  
Christopher Muratore ◽  
Michael Snure
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

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