Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2829-2832 ◽  
Author(s):  
Guolin Yu ◽  
Tetsuo Soga ◽  
Junji Watanabe ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition

2005 ◽  
Vol 250 (1-4) ◽  
pp. 280-283 ◽  
Author(s):  
Yu-Jia Zeng ◽  
Zhi-Zhen Ye ◽  
Wei-Zhong Xu ◽  
Li-Ping Zhu ◽  
Bing-Hui Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Nanowires ◽  
Organic Chemical ◽  
Si Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 339 ◽  
Author(s):  
Gene Siegel ◽  
Gordon Gryzbowcki ◽  
Albert Hilton ◽  
Christopher Muratore ◽  
Michael Snure
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

2011 ◽  
Vol 4 (11) ◽  
pp. 115501 ◽  
Author(s):  
Binh-Tinh Tran ◽  
Edward-Yi Chang ◽  
Kung-Liang Lin ◽  
Yuen-Yee Wong ◽  
Kartika Chandra Sahoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Photoluminescence and lasing characteristics of single nonpolar GaN microwires

RSC Advances ◽  
2017 ◽  
Vol 7 (35) ◽  
pp. 21541-21546
Author(s):  
S. S. Yan ◽  
A. Q. Chen ◽  
Y. Y. Wu ◽  
H. Zhu ◽  
X. H. Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nonpolar Gan

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.

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