DEPENDENCE OF ELASTIC STRESSES ON THE THICKNESS OF THE DEPOSITED MATERIAL FOR GERMANIUM GROWTH ON SILICON
2020 ◽
Keyword(s):
In this work, the dependences of the elastic stresses on the thickness of the deposited material during the growth of germanium quantum dots on silicon have been determined by the fast electron diffraction method. It is shown that the relative value substrate in this system reaches 12.5%.
1999 ◽
Vol 55
(2)
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pp. 188-196
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1956 ◽
Vol 29
(8)
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pp. 876-883
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2003 ◽
Vol 59
(6)
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pp. 802-810
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Keyword(s):
2020 ◽
2021 ◽
1968 ◽
Vol 22
◽
pp. 2294-2304
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Keyword(s):