scholarly journals Структура межфазной границы alpha-beta в твердом растворе PdCu

2020 ◽  
Vol 62 (1) ◽  
pp. 53
Author(s):  
В.М. Иевлев ◽  
А.С. Прижимов ◽  
А.И. Донцов
Keyword(s):  
Molecular Dynamics ◽  
Solid Solution ◽  
Electron Diffraction ◽  
Fast Electron ◽  
Diffraction Method ◽  
Orientation Relation ◽  
Β Phase ◽  
Phase Coordinates ◽  
Interfacial Dislocations ◽  
Alpha Beta

In accordance with the orientation relation (110),<001>β || (111),<110> α, established by the fast electron diffraction method between ordered (β) and disordered (α) phases in the Pd – 57 at .% Cu solid solution foil , the atomic structure of the interface is modeled by molecular dynamics. It is found that the structural and dimensional mismatch is compensated by interfacial dislocations with Burgers vectors a / 2 <111> in β-phase coordinates.

scholarly journals DEPENDENCE OF ELASTIC STRESSES ON THE THICKNESS OF THE DEPOSITED MATERIAL FOR GERMANIUM GROWTH ON SILICON

2020 ◽  
Author(s):  
Andrey Kokhanenko ◽  
Vladimir Dirko ◽  
Kiril Lozovoy
Keyword(s):  
Quantum Dots ◽  
Electron Diffraction ◽  
Fast Electron ◽  
Diffraction Method ◽  
Elastic Stresses ◽  
Relative Value ◽  
Germanium Quantum Dots

In this work, the dependences of the elastic stresses on the thickness of the deposited material during the growth of germanium quantum dots on silicon have been determined by the fast electron diffraction method. It is shown that the relative value substrate in this system reaches 12.5%.

Three-phase structure invariants and structure factors determined with the quantitative convergent-beam electron diffraction method

1999 ◽  
Vol 55 (2) ◽  
pp. 188-196 ◽  
Author(s):  
R. Høier ◽  
C. R. Birkeland ◽  
R. Holmestad ◽  
K Marthinsen
Keyword(s):  
Electron Diffraction ◽  
Phase Structure ◽  
Diffraction Method ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Structure Factors ◽  
Refinement Method ◽  
Three Phase ◽  
Phase Sensitive ◽  
Convergent Beam

Quantitative convergent-beam electron diffraction is used to determine structure factors and three-phase structure invariants. The refinements are based on centre-disc intensities only. An algorithm for parameter-sensitive pixel sampling of experimental intensities is implemented in the refinement procedure to increase sensitivity and computer speed. Typical three-beam effects are illustrated for the centrosymmetric case. The modified refinement method is applied to determine amplitudes and three-phase structure invariants in noncentrosymmetric InP. The accuracy of the results is shown to depend on the choice of the initial parameters in the refinement. Even unrealistic starting assumptions and incorrect temperature factor lead to stable results for the structure invariant. The examples show that the accuracy varies from 1 to 10° in the electron three-phase invariants determined and from 0.5 to 5% for the amplitudes. Individual phases could not be determined in the present case owing to spatial intensity correlations between phase-sensitive pixels. However, for the three-phase structure invariant, stable solutions were found.

New electron diffraction method to identify the chirality of enantiomorphic crystals

2003 ◽  
Vol 59 (6) ◽  
pp. 802-810 ◽  
Author(s):  
Haruyuki Inui ◽  
Akihiro Fujii ◽  
Katsushi Tanaka ◽  
Hiroki Sakamoto ◽  
Kazuo Ishizuka
Keyword(s):  
Electron Diffraction ◽  
Multiple Scattering ◽  
Present Method ◽  
Diffraction Method ◽  
Convergent Beam Electron Diffraction ◽  
Intensity Difference ◽  
Crystal Thickness ◽  
Dynamical Nature ◽  
Convergent Beam ◽  
Phase Angles

A new CBED (convergent-beam electron diffraction) method is proposed for the identification of the chirality of enantiomorphic crystals, in which asymmetry in the intensity of the reflections of Bijvoet pairs in an experimental symmetrical zone-axis CBED pattern is compared with that of a computer-simulated CBED pattern. The intensity difference for reflections of these Bijvoet pairs results from multiple scattering (dynamical nature of electron diffraction) among relevant Bijvoet pairs of reflections, each pair of which has identical amplitude and different phase angles. Therefore, the crystal thickness where chiral identification is made with the present method is limited by the extinction distance of Bijvoet pairs of reflections relevant to multiple scattering to produce the intensity asymmetry, which is usually of the order of a few tens of nanometers. With the present method, a single CBED pattern is sufficient and chiral identification can be made for all the possible enantiomorphic crystals that are allowed to exist in crystallography.

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