scholarly journals Crystallization of Silicon Thin Films by Infrared Semiconductor Laser Irradiation Using Carbon Particles

2009 ◽  
Vol 4 (3) ◽  
pp. 227-230 ◽  
Author(s):  
T. Sameshima
2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  

2012 ◽  
Vol 520 (24) ◽  
pp. 7087-7092 ◽  
Author(s):  
T. Schmidt ◽  
I. Höger ◽  
A. Gawlik ◽  
G. Andrä ◽  
F. Falk

2007 ◽  
Vol 59 ◽  
pp. 458-461
Author(s):  
J Eizenkop ◽  
D G Georgiev ◽  
I Avrutsky ◽  
G Auner ◽  
V Chaudhary

Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti

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