Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-715-Pr3-722 ◽  
Author(s):  
E. Amanatides ◽  
D. E. Rapakoulias ◽  
D. Mataras
Keyword(s):  
Thin Films ◽  
Electron Impact ◽  
Deposition Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Rate Relationship

High deposition rate processes for the fabrication of microcrystalline silicon thin films

2013 ◽  
Vol 178 (9) ◽  
pp. 691-694 ◽  
Author(s):  
S. Michard ◽  
M. Meier ◽  
B. Grootoonk ◽  
O. Astakhov ◽  
A. Gordijn ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Rate Processes

Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD

Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 104-112 ◽  
Author(s):  
Xinli Li ◽  
Ruimin Jin ◽  
Lihua Li ◽  
Jingxiao Lu ◽  
Yongjun Gu ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Growth Mechanism ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
Very High

Microcrystalline silicon thin films grown at high deposition rate by PECVD

2006 ◽  
Vol 511-512 ◽  
pp. 280-284 ◽  
Author(s):  
G. Ambrosone ◽  
U. Coscia ◽  
S. Lettieri ◽  
P. Maddalena ◽  
M. Ambrico ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films

Effect of Hydrogen Dilution on Properties of Microcrystalline Silicon Thin Films Prepared by VHF-PECVD

2013 ◽  
Vol 652-654 ◽  
pp. 1739-1742
Author(s):  
Xia Wu ◽  
Long Gu ◽  
Ji Sen Zhang ◽  
Hui Dong Yang
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Structural Characteristics ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Dilution Ratio ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Microcrystalline silicon thin films were deposited on glass substrates by VHF-PECVD varying the ratio of hydrogen dilution from 88% to 98%. The structural characteristics, deposition rate and photosensitivity of the films were investigated. With the improvement of the hydrogen dilution ratio, crystallization rate of the films had been improved which was much more stable than amorphous silicon that the films transmit from amorphous silicon to microcrystalline silicon. However the deposition rate had been reduced with the increase of the hydrogen dilution and the highest deposition rate was 0.43nm/s. The samples showed a downward trend of photosensitivity with optical and dark conductivity both decreasing first then increasing. Thus suitable hydrogen dilution ratio should be chosen according to the different needs in preparation of microcrystalline silicon film.

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films
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