scholarly journals Effect of Deposit Au thin Layer Between Layers of Perovskite Solar Cell on Cell's Performance

2021 ◽  
Vol 19 (51) ◽  
pp. 23-32
Author(s):  
Ahmed Ali Assi ◽  
Wasan R. Saleh ◽  
Ezzedin Mohajerani

The present work aims to fabricate n-i-p forward perovskite solar cell (PSC) withئ structure (FTO/ compact TiO2/ compact TiO2/ MAPbI3 Perovskite/ hole transport layer/ Au). P3HT, CuI and Spiro-OMeTAD were used as hole transport layers. A nano film of 25 nm gold layer was deposited once between the electron transport layer and the perovskite layer, then between the hole transport layer and the perovskite layer. The performance of the forward-perovskite solar cell was studied. Also, the role of each electron transport layer and the hole transport layer in the perovskite solar cell was presented. The structural, morphological and electrical properties were studied with X-ray diffractometer, field emission scanning electron microscope and current-voltage (J-V) characteristic curves, respectively. J-V curves revealed that the deposition of the Au layer between the electron transport layer (ETL) and Perovskite layer (PSK) reduced the power conversion efficiency (PCE) from 3% to 0.08% when one layer of C. TiO2 is deposited in the PSC and to 0.11% with two layers of C. TiO2. Power conversion efficiency, with CuI as the hole transport layer (HTL), showed an increase from 0.5% to 2.7% when Au layer was deposited between PSK and CuI layers. Also, Isc increased from 6.8 mA to 17.4 mA and Voc from 0.3 V to 0.5V. With depositing Au layer between P3HT and PSK layers, the results showed an increase in the efficiency from 1% to 2.6% and an increase in Isc from 10.7 mA to 30.5 mA, while Voc decreased from 0.75 V to 0.5V

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2110
Author(s):  
Syed Abdul Moiz ◽  
Ahmed N. M. Alahmadi

Halide based perovskite offers numerous advantages such as high-efficiency, low-cost, and simple fabrication for flexible solar cells. However, long-term stability as well as environmentally green lead-free applications are the real challenges for their commercialization. Generally, the best reported perovskite solar cells are composed of toxic lead (Pb) and unstable polymer as the absorber and electron/hole-transport layer, respectively. Therefore, in this study, we proposed and simulated the photovoltaic responses of lead-free absorber such as cesium titanium (IV) bromide, Cs2TiBr6 with dopant free electron phenyl-C61-butyric acid methyl ester (PCBM), and dopant free hole transport layer N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) for the Ag/BCP/PCBM/Cs2TiBr6/NPB/ITO based perovskite solar cell. After comprehensive optimization of each layer through vigorous simulations with the help of software SCAPS 1D, it is observed that the proposed solar cell can yield maximum power-conversion efficiency up to 16.85%. This efficiency is slightly better than the previously reported power-conversion efficiency of a similar type of perovskite solar cell. We believe that the outcome of this study will not only improve our knowledge, but also triggers further investigation for the dopant and lead-free perovskite solar cell.


2020 ◽  
Vol 34 (24) ◽  
pp. 2050258
Author(s):  
Anjan Kumar ◽  
Sangeeta Singh

Metal halide-perovskite solar cells have managed to attain soaring heights in power conversion efficiency in the past decade, rising from 3.8% to around 24% in 2019. Formal lead-based perovskites have captivated massive attention because of their then toxic nature and short-term stability of fabricated devices. Therefore, lead-free perovskites have drawn the researcher’s interest in recent years. In this work, we projected a unique planar perovskite structure constituted of [Formula: see text] Tungsten Disulfide [Formula: see text] lead-free perovskite[Formula: see text]. Herein, Tungsten Disulfide (WS2) acts as an electron transport layer (ETL) due to its excellent electron transport capability. The cuprous oxide is used as a hole transport layer (HTL) due to its perfect band alignment with perovskites. The proposed structure is quantitatively analyzed using a solar cell capacitance simulator. The simulation carried out revealed that tin halide perovskite (CH3NH3SnI3) is having the great potential to be an absorbent layer. The proposed configuration demonstrated excellent power configuration efficiency (PCE) of 23% at an optimized thickness of different segments. The impact of neutral defect density and position of defect energy level with respect to active layer on device performance was quantitatively analyzed. The results showed that values of performance parameters ([Formula: see text], FF, [Formula: see text] and PCE) of proposed device configurations are drastically reduced with increasing the total defect density of interfacial and perovskite layers. These simulated results will help the researchers working in the specific area of lead-free perovskite solar cell (LFPSC) fabrication.


2021 ◽  
Vol 24 (3) ◽  
pp. 341-347
Author(s):  
K. Bhavsar ◽  
◽  
P.B. Lapsiwala ◽  

Perovskite solar cells have become a hot topic in the solar energy device area due to high efficiency and low cost photovoltaic technology. However, their function is limited by expensive hole transport material (HTM) and high temperature process electron transport material (ETM) layer is common device structure. Numerical simulation is a crucial technique in deeply understanding the operational mechanisms of solar cells and structure optimization for different devices. In this paper, device modelling for different perovskite solar cell has been performed for different ETM layer, namely: TiO2, ZnO, SnO2, PCBM (phenyl-C61-butyric acid methyl ester), CdZnS, C60, IGZO (indium gallium zinc oxide), WS2 and CdS and effect of band gap upon the power conversion efficiency of device as well as effect of absorber thickness have been examined. The SCAPS 1D (Solar Cell Capacitance Simulator) has been a tool used for numerical simulation of these devices.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Muhammad Shafiqul Islam ◽  
Sabrina Rahman ◽  
Adil Sunny ◽  
Md. Ashfaqul Haque ◽  
Md. Suruz Mian ◽  
...  

Abstract The present work investigates a tin-based highly efficient perovskite solar cell (PSC) by a solar cell capacitance simulator in one dimension. Molybdenum disulfide is introduced as hole transport layer in the proposed solar cell device structure. The photovoltaic performances of the proposed solar cell are investigated by varying thickness, doping concentration, and bulk defect density of various layers. Furthermore, the operating temperature and the series and shunt resistances are analyzed systematically. A higher conversion efficiency of 25.99% is obtained at the absorber thickness of 2000 nm. The optimum doping density of 1017 cm−3 is estimated for the absorber, electron transport layer (ETL), and hole transport layer (HTL), respectively. The optimum thicknesses of 50 nm, 1000 nm, and 60 nm are also found for the titanium dioxide as ETL, methylammonium tin triiodide (CH3NH3SnI3) as absorber layer, and molybdenum disulfide as HTL, respectively. The efficiency of the proposed lead-free CH3NH3SnI3-based solar cell with the alternative molybdenum disulfide HTL is calculated to be 24.65% with open-circuit voltage of 0.89 V, short-circuit current density of 34.04 mA/cm2, and fill-factor of 81.46% for the optimum parameters of all layers. These findings would contribute to fabricate low-cost, non-toxic, stable, and durable lead-free PSCs for the next generation.


2021 ◽  
pp. 45-51

The article is devoted to the creation of a model of a perovskite solar cell with the FTO/TiO2/CH3NH3PbI3-xClx/Cu2O/Au structure in the SCAPS-1D numerical simulation pro-gram. The effect of the thickness of the CH3NH3PbI3-xClxperovskite layer, as well as the thick-ness, concentration of acceptors, and hole mobility in the Cu2O layer on the photoelectric characteristicsof solar cells has been studied. It was found that the optimal thickness of the perovskite layer is 600–700 nm. An increase in the thickness of the Cu2O layer from 50 nm to 500 nm does not have a significant effect on the efficiency of the solar cell, while the optimal concentration of acceptors in the Cu2O layer is 1018–1019cm-3, and the holemobility should be more than 0.1 cm2/Vs. It is shown that a perovskite solar cell with a hole conductive layer Cu2O has better characteristics compared to the Spiro-OMeTAD layer and has the highest effi-ciency of 21.55%


The researchers now days are avid of solar cells despite the efficiency issues. As lead-based halide perovskite exhibit toxic nature alternatives for the anti- toxic perovskite solar cells(PSCs) are gaining much research. Bis(sulfanylidene )tungsten is a toxic free feasible emerging option with direct band gap of value 1.8 eV. Tungsten disulfide is other chemical name of Bis(sulfanylidene)tungsten. In this paper, perovskite solar cell (PSC) with Bis(sulfanylidene)tungsten (WS2 ) as electron transport layer and spiro-OMeTAD as hole transport layer is modelled and simulated using SCAPS software to analyze performance parameters. The device simulations results are compared for comprehensive defect study of WS2 as ETL. With integration of WS2 and spiro-OMeTAD in the perovskite design, the outcomes are proficient enough with 25.96% of PCE, 22.06 mA/cm2 Jsc, 1.280V Voc and 91.76% FF. Launching the batch setup for absorber layer thickness further resulted with competent PCE 27.78%. The outcomes signified that the toxic-free WS2 based PSC can be a prominent upcoming perspective in terms of environmentally pristine nature and capitulate comparative high efficiency


2020 ◽  
Vol 4 (1) ◽  
pp. 21
Author(s):  
Ashique Kotta ◽  
Hyung-Kee Seo

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing future generation solar cells, due to their high efficiency exceeding 25%. For inverted type perovskite solar cells, the hole transporting layer plays a crucial role in improving the efficiency and stability of the perovskite solar cells by modifying band alignment, electric conductivity, and interfacial recombination losses. Here, vanadium doped NiO is selected as a hole transporting layer to study the impact of V dopant on the optoelectronic properties of NiO and photovoltaic performance. The prepared materials are characterized using XRD, SEM, TEM, and XPS. A TEM micrograph confirms that p-type materials have a small spherical dot structure. The V-doped NiO, used as a hole-extraction layer, can be prepared by a simple solvothermal decomposition method. The presence of V in the NiO layer has an influence on the conductivity of the NiO layer. Besides, synthesized p-type material can be used to fabricate a relatively low processing temperature, and has the advantage of a wide choice of transparent conductive oxide substrate. As a result, an inverted type planar perovskite solar cell incorporating of vanadium in NiO hole-transport layer improves the power conversion efficiency. The photovoltaic property of the prepared solar cell is measured under AM 1.5 G simulated light. The photocurrent density is 21.09 mA/cm2, open-circuit voltage is 1.04 V, and the fill factor is 0.63. As a result, the overall power conversion efficiency reaches 13.82%.


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