Effect of Nitrogen Concentration in a Gas Mixture on the Structure and Properties of Zr–B–(N) Coatings Obtained by the HIPIMS Methods

2021 ◽  
Vol 62 (6) ◽  
pp. 785-793
Author(s):  
A. D. Sytchenko ◽  
S. B. Kabildina ◽  
Ph. V. Kiryukhantsev-Korneev
Keyword(s):  
Nitrogen Concentration ◽  
Gas Mixture ◽  
Structure And Properties

Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane

2007 ◽  
Vol 989 ◽  
Author(s):  
Amornrat Limmanee ◽  
Michio Otsubo ◽  
Tsutomu Sugiura ◽  
Takehiko Sato ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Nitrogen Concentration ◽  
Short Circuit Current ◽  
Nitrogen Addition ◽  
Silicon Solar Cells ◽  
Gas Mixture ◽  
Improved Performance

AbstractWe deposited a-SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane, H2 and N2, and fabricated cast polycrystalline silicon solar cells with the a-SiCN:H passivation and anti-reflection layer. N2 addition led to the reduction of the refractive index of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N2 to the process was demonstrated by the improvement in short circuit current (JSC) and efficiency of cast polycrystalline silicon solar cells. At present, the efficiency of cast polycrystalline silicon solar cell using a-SiCN:H film as a passivation layer reached 14.2%.

The effect of nitrogen addition to Ar/CH4 gas mixture on microstructural characterization of nanocrystalline diamond

2014 ◽  
Vol 34 (3) ◽  
pp. 253-258
Author(s):  
Wei-Fang Lee ◽  
Chia-Yu Wu ◽  
Che-Tong Lin ◽  
Chiao-Yun Peng ◽  
Hui-Wen You ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Microstructural Characterization ◽  
Nitrogen Addition ◽  
Nanocrystalline Diamond ◽  
Gas Mixture ◽  
Bonding Structure ◽  
Ar Gas

Abstract In the present study, nanocrystalline diamond (NCD) nanowire films were synthesized on silicon substrates, using microwave plasma-enhanced chemical vapor deposition (PECVD) with a CH4/Ar/N2 gas mixture at moderate temperatures. The influence of nitrogen concentration on the formation of NCD was investigated. The characteristics of NCD films were evaluated using scanning electron microscopy (SEM), Raman spectroscopy, optical emission spectroscopy (OES), and a contact angle meter. NCD nanowire films with 300–500 nm length were grown with the incorporation of nitrogen. Heterostructures of sp3-bonded diamond nanowires and sp2-bonded graphite were synthesized by adding small amounts of nitrogen to the CH4/Ar gas mixture. Surface roughness became smooth and the grain size decreased as the nitrogen was introduced into the CH4/Ar gas mixture. With the increase of nitrogen concentration, the sp2/sp3 ratio of carbon bonds increased. The wettability of the NCD nanowire films was sensitive to the bonding structure. The hydrophobic and non-reactive properties of NCD nanowire films make them highly applicable for biomedical implants.

Effect of Nitrogen Flow Rate on the Structure and Properties of TiN Thin Films Deposited onto β-Type Ti-15Mo-3Nb-3Al-0.2Si Alloy Substrates by Reactive Magnetron Sputtering

2012 ◽  
Vol 557-559 ◽  
pp. 1998-2001 ◽  
Author(s):  
Jun Hee Lee ◽  
A. Joseph Nathanael ◽  
Sun Ig Hong
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Flow ◽  
Structure And Properties ◽  
Nitrogen Flow Rate ◽  
Average Roughness ◽  
Tin Thin Films

Titanium Nitride (TiN) thin film was deposited on β-type Ti-15Mo-3Nb-3Al-0.2Si alloy plates by RF magnetron sputtering method. The effect of nitrogen flow rate on the structure and properties of the TiN thin films were studied. The preferred orientation of TiN thin films changed from (111) to (200) as the nitrogen flow rate increased due to the effect of the kinetic energy of the bombarding particles. The coating thickness was found to decrease with increasing nitrogen concentration, which also favors (200) orientation with increasing nitrogen flow rate. With increase of nitrogen flow, the morphology of the TiN thin films films changed from characteristic pyramidal shaped grains to columnar-shaped grains. The roughness analysis of the coating shows that the average roughness of the coating decreased with increasing nitrogen flow rate. The increase of hardness with increasing nitrogen flow rate is attributed to the decrease in grain size.

scholarly journals Влияние условий синтеза и наночастиц олова на структуру и свойства композитных тонких пленок a-С:Н<Sn>

2018 ◽  
Vol 52 (10) ◽  
pp. 1207 ◽  
Author(s):  
А.П. Рягузов ◽  
Р.Р. Немкаева ◽  
Н.Р. Гусейнов
Keyword(s):  
Raman Spectroscopy ◽  
Local Structure ◽  
Optical Band Gap ◽  
Composite Films ◽  
Gas Mixture ◽  
Photoluminescence Intensity ◽  
Structure And Properties ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Tin Nanoparticles

AbstractThe results of studies of the structure and properties of composite materials based on amorphous carbon ( a -C:H) films and tin nanoparticles are reported. The composite films are synthesized by the magnetron-assisted ion-plasma sputtering of a combined target in a 92%Ar : 4%CH_4 : 4%H_2 gas mixture. The dependence of the local structure of the a -C:H〈Sn〉 films on the conditions of synthesis and the content of Sn nanoparticles is clarified by means of Raman spectroscopy. The dependence of the photoluminescence intensity and the optical band gap of a -C:H〈Sn〉 films on the Sn content is shown.

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