scholarly journals An 550-650 MHz Digitally-Tunable Bandpass Filter: Design and Implementation

2019 ◽  
Vol 17 (12.2) ◽  
pp. 13
Author(s):  
Nguyen Xuan Quyen ◽  
Vu Dang Quang
Keyword(s):  
Filter Design ◽  
Band Pass Filter ◽  
Central Frequency ◽  
Pass Filter ◽  
Filter Model ◽  
Varactor Diodes ◽  
Band Pass ◽  
Dc Bias ◽  
Lc Resonators ◽  
Chebyshev Filter

In this paper, a digitally-tunable band-pass filter is designed and implemented for applications of Cognitive Radio in middle Ultra high frequency television band from 550 to 650 MHz. This design is based on the 3th-order Chebyshev filter model in the combination with impedance inverters and series LC resonators, where capacitors are replaced by varactor diodes. The central frequency is tuned by means of a digital control board to adjust DC bias voltages of the diodes. Theoretical analysis, numerical simulation, and hardware implementation are described and carried out. The RF board is fabricated using SMV1736 varactor diodes with FR4-0.8mm material. The results show good match between simulations and measurements in terms of return loss, insertion loss, and fractional bandwidth over the operating range.

SELF-TUNING BIQUAD BAND-PASS FILTER

2013 ◽  
Vol 22 (03) ◽  
pp. 1350008 ◽  
Author(s):  
GORAN JOVANOVIĆ ◽  
DARKO MITIĆ ◽  
MILE STOJČEV ◽  
DRAGAN ANTIĆ
Keyword(s):  
Dynamic Range ◽  
Signal Frequency ◽  
Band Pass Filter ◽  
Central Frequency ◽  
Pass Filter ◽  
Input Signal Frequency ◽  
Bicmos Technology ◽  
Self Tuning ◽  
Band Pass ◽  
Constant Bandwidth

One approach to design self-tuning gm-C biquad band-pass filter is considered in this paper. The phase control loop is introduced to force filter central frequency to be equal to input signal frequency what is achieved by adjusting the amplifier transconductance gm. Thanks to that, the filter is robust to parameter perturbations and it can be used as a selective amplifier. In the full tuning range, it has a constant maximum gain at central frequency as well as a constant bandwidth. The 0.25 μm SiGe BiCMOS technology was used during design and verification of the band-pass filter. The filter has 26 dB gain, quality factor Q = 20 and central frequency up to 150 MHz. Simulation results indicate that the total in-band noise is 59 μV rms , the output third intercept point OIP3 = 4.36 dB and the dynamic range is 35 dB. Maximal power consumption at 3 V power supply is 1.115 mW.

Reconfigurable dual-mode band-pass filter with switchable bandwidth using PIN diodes

2014 ◽  
Vol 7 (6) ◽  
pp. 655-660 ◽  
Author(s):  
Photos Vryonides ◽  
Symeon Nikolaou ◽  
Sangkil Kim ◽  
Manos M. Tentzeris
Keyword(s):  
Insertion Loss ◽  
Center Frequency ◽  
Band Pass Filter ◽  
Dual Mode ◽  
Pin Diodes ◽  
Pass Filter ◽  
Physical Size ◽  
Wireless Applications ◽  
Band Pass ◽  
Dc Bias

A reconfigurable band-pass filter with switchable bandwidth, for wireless applications is demonstrated using a dual-mode microstrip square-loop resonator. The proposed filter has been designed on Rogers RO4003C and achieves switchable bandwidth by changing the length of two tuning stubs with the implementation of two strategically placed p-i-n diodes as switching elements. The filter was designed with a center frequency of 2.4 GHz and the two distinct operation states have bandwidths, 113 MHz (4.8%) with an insertion loss of 1.2 dB and 35 MHz (1.5%) with an insertion loss of 1.5 dB. The physical size of the fabricated reconfigurable filter including the implementation of the DC bias lines is comparable to the size of a conventional filter.

COMPACT MICROSTRIP BAND-PASS FILTER FOR EMI REDUCTION

2015 ◽  
Vol 77 (12) ◽  
Author(s):  
Kabir Ibrahim Jahun ◽  
Hussein Mohamed Hagi Hassan Abdirahman Mohamud Shire ◽  
Ali Orozi Sougui ◽  
S. H. Dahlan
Keyword(s):  
Filter Design ◽  
Stop Band ◽  
Band Pass Filter ◽  
Defected Ground Structure ◽  
Coupled Line ◽  
Pass Filter ◽  
Filter Structure ◽  
Coupled Lines ◽  
Band Pass ◽  
Compact Design

Compact microstrip band-pass filter design using parallel coupled lines is presented in this paper. The microstrip lines are calculated and constructed using CST studio with two input and output ports of the filter structure are printed over Defected Ground Structure (DGS).The proposed symmetrical structure offers a simple and compact design while exhibiting an improved stop-band characteristics in comparison to conventional coupled microstrip line filter structure. The simulation and measurements of 2GHz prototype band pass filter are presented. The measured result agrees well with the simulation data. Compared with conventional parallel coupled line band pass filter, the second, third and fourth spurious responses are suppressed; in addition, the size of the prototype filter circuit is reduced up to 20.8%.  

Fast Locking Time Biquadratic Band-Pass Filter Utilizing Nonlinear Sliding-Mode Controller

2020 ◽  
pp. 2150154
Author(s):  
Darko Mitić ◽  
Goran Jovanović ◽  
Mile Stojčev ◽  
Dragan Antić
Keyword(s):  
Input Signal ◽  
Sliding Mode ◽  
Design Procedure ◽  
Signal Frequency ◽  
Sliding Mode Controller ◽  
Band Pass Filter ◽  
Central Frequency ◽  
Pass Filter ◽  
Bicmos Technology ◽  
Band Pass

This paper considers design procedure of fast locking time self-tuning [Formula: see text] biquadratic band-pass filter with nonlinear sliding mode control. A sliding mode controller is building block of the phase control loop (PCL) involved to push central frequency to reach input signal frequency very fast, approximately 100–200[Formula: see text]ns. The sliding mode controller is realized by using a tunable delay line, enabling optimal filter locking time for different input signal frequencies. The filter possesses low sensitivity to component discrepancy and is applied as a selective amplifier. The 0.13[Formula: see text][Formula: see text]m SiGe BiCMOS technology has been utilized for design and verification of the presented filter. This filter has central frequency up to 220[Formula: see text]MHz, quality factor [Formula: see text] and 25[Formula: see text]dB gain.

scholarly journals Noise-Cancelling CMOS Active Inductor and Its Application in RF Band-Pass Filter Design

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Santosh Vema Krishnamurthy ◽  
Kamal El-Sankary ◽  
Ezz El-Masry
Keyword(s):  
Filter Design ◽  
Low Noise ◽  
Total Power ◽  
Active Inductor ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Noise Cancelling ◽  
Total Power Consumption ◽  
Band Pass

A CMOS active inductor with thermal noise cancelling is proposed. The noise of the transistor in the feed-forward stage of the proposed architecture is cancelled by using a feedback stage with a degeneration resistor to reduce the noise contribution to the input. Simulation results using 90 nm CMOS process show that noise reduction by 80% has been achieved. The maximum resonant frequency and the quality factor obtained are 3.8 GHz and 405, respectively. An RF band-pass filter has been designed based on the proposed noise cancelling active inductor. Tuned at 3.46 GHz, the filter features total power consumption of 1.4 mW, low noise figure of 5 dB, and IIP3 of −10.29 dBm.

Sign in / Sign up

Export Citation Format

Share Document