All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

2011 ◽  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Flow ◽  
Series Resistance ◽  
Electrical Contacts ◽  
New Method ◽  
Contactless Measurement ◽  
Sample Handling ◽  
Imaging Methods ◽  
Lateral Current

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.

A new method for the measurement of series resistance of solar cells

1981 ◽  
Vol 14 (9) ◽  
pp. 1643-1646 ◽  
Author(s):  
S K Agarwal ◽  
R Muralidharan ◽  
A Agarwala ◽  
V K Tewary ◽  
S C Jain
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
New Method

scholarly journals The Effect of Different Surface Plasmon Polaritons Shapes on Thin Film Solar Cell Efficiency

2021 ◽  
Author(s):  
Khalil ElKhamisy ◽  
Salah Elagooz ◽  
El-Sayed El-Rabaie ◽  
Hamdy Abdelhamid
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Thin Film Solar Cell ◽  
Series Resistance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Plasmon Polaritons

Abstract Thin film Si solar cell and surface plasmon polaritons (SPPs) effects on solar cell efficiency, series resistance and shunt resistance are studied and analyzed in this work. The different surface plasmon polaritons (SPPs) shapes and their effects on the optical, electrical properties and therefore on the efficiency of thin film solar cell are studied in this work. This study is introduced using 3D numerical simulation results. The semiconductor and electromagnetic models are incorporated for studying the electrical and optical behaviors of the thin film solar cells, respectively. A 14.76% efficiency is obtained for triangle’ SPPs of about 1.07% of efficiency improvement compared to solar cell of SPPs free. The solar cell electrical parameters also are extracted in this work based on a single diode equivalent model. The series resistance is enhanced for solar cells of equilateral triangle SPP by 3% compared to the non-applied SPPs.

The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells

2007 ◽  
Vol 124-126 ◽  
pp. 1015-1018
Author(s):  
Sang Kyun Kim ◽  
Jung Chul Lee ◽  
Viresh Dutta ◽  
Sung Ju Park ◽  
Kyung Hoon Yoon
Keyword(s):  
Solar Cells ◽  
Current Flow ◽  
Defect Formation ◽  
Series Resistance ◽  
Working Pressure ◽  
Heterojunction Solar Cells ◽  
Corning Glass ◽  
Device Efficiency ◽  
Lower Series ◽  
Si Wafer

A-Si:H/Si wafer heterojunction solar cells with different ZnO:Al sputtering conditions were fabricated and the effects of sputtering conditions on device performance were evaluated. Various sputter condition(substrate temperature RT~200’C, working pressure 0.5mTorr~15mTorr, thickness 60~100nm) were tested and optimized as 130’C, 0.5mTorr, 80nm by measuring reflectance and sheet resistance of ZnO:Al layer on corning glass. However, when optimal ZnO:Al condition was applied to solar cells, series resistance was high which led to device efficiency ~10%. Dark I-V curves of with and w/o ZnO layer showed large difference, which means there is a kind of barrier to current flow between ZnO:Al and a-Si:H layer. Modified condition with double layer scheme was applied and lower series resistance and device efficiency above 12% could be reached. The improvement may be due to either suppression of Si oxide formation or less defect formation by impinging atoms.

scholarly journals Series resistance effect on the output parameters of buried emitter silicon solar cells

1999 ◽  
Vol 1 (2) ◽  
pp. 117-129
Author(s):  
Gamal M. Eldallal ◽  
Mohamed Y. Feteha ◽  
Mostafa E. Mousaa
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Theoretical Model ◽  
Equivalent Circuit ◽  
Silicon Solar Cell ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Published Data

A realistic distributed equivalent circuit for the buried emitter silicon solar cell is presented taking into consideration the carriers paths through the planar and vertical junctions. In addition, a new theoretical model for the cell characteristics including the cell's mismatching, series resistance, different junctions (planar and vertical) and junctions geometry is considered in this work. The results are compared with the published data.

Nanoparticle-Based Contacts to CdTe

1998 ◽  
Vol 536 ◽  
Author(s):  
D. L. Schulz ◽  
R. Ribelin ◽  
C. J. Curtis ◽  
D. E. King ◽  
D. S. Ginley
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Valence State ◽  
Series Resistance ◽  
Open Circuit ◽  
Standard Methods ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

AbstractOur team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

Effects of Temperature on I-V Characteristics of InAs/GaAs Quantum-Dot Solar Cells

2015 ◽  
Vol 1103 ◽  
pp. 129-135 ◽  
Author(s):  
Saichon Sriphan ◽  
Suwit Kiravittaya ◽  
Supachok Thainoi ◽  
Somsak Panyakaew
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Series Resistance ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Substantial Improvement ◽  
Open Circuit ◽  
Gaas Quantum Dot

The current-voltage (I-V) characteristics of quantum-dot (QD) solar cells under illumination at various temperatures are presented. Stacked of high-density self-assembled InAs/GaAs QDs were incorporated into the Schottky-barrier-type solar cell structure. The I-V characteristics reveal that both short-circuit current and open-circuit voltage of the QD solar cell reduce when the measurement temperature increases. This result is unexpected and inconsistent with a basic solar cell theory where the temperature is believed to cause the enhancement of the short-circuit current. By considering the solar-cell circuit model, we can explain the obtained I-V curves by a high series resistance of the cell structure. Theoretical exclusion of the series resistance shows a substantial improvement of solar cell fill factor and efficiency. This work therefore suggests that reduction of series resistance by properly doping of the epitaxial layers can improve these devices.

scholarly journals Diagnostics of Solar Cells

2019 ◽  
Vol 302 ◽  
pp. 01013
Author(s):  
Valeriy Martynyuk ◽  
Juliy Boiko ◽  
Marcin Łukasiewicz ◽  
Ewa Kuliś ◽  
Janusz Musiał
Keyword(s):  
Mathematical Model ◽  
Solar Cells ◽  
Solar Cell ◽  
Series Resistance ◽  
Cell Model ◽  
Methodological Approach ◽  
Technical Condition ◽  
Impedance Model ◽  
Voltage Ratio ◽  
The Mathematical Model

The paper represents the mathematical model for diagnostics of solar cell. The research objectives are the problem of determining a solar cell technical condition during its operation. The solar cell diagnostics is based on the mathematical model of solar cells. The single-diode solar cell model is characterized by a slight deviation of the theoretically calculated characteristics from the characteristics of the real solar cell, one of the reasons being the complexity of the accurate measurement of the series resistance. The single-diode solar cell model uses the current and voltage ratio in the form of an implicit function and it cannot be solved directly. For its solution it is necessary to use numerical methods. This is main disadvantage of the single-diode solar cell model. The methodological approach to increasing the reliability of the solar cell diagnostic has been proposed, in terms of multi-parameter the solar cell diagnostic by applying the solar cell impedance model.

Evaluation and Optimization of Grid Patterns of Silicon Solar Cells by Diode and Series Resistance Model

2012 ◽  
Vol 529 ◽  
pp. 53-58
Author(s):  
Sheng Kai Fan ◽  
Jia Xuan Liao ◽  
Xiong Bang Wei ◽  
Sheng Hua Hu ◽  
Jian Yu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Key Factors ◽  
Fine Grid ◽  
Grid Line ◽  
Proposed Model ◽  
Resistance Model

Series resistance in solar cell is known to be one of the key factors which need to be optimized, especially through the design of the front pattern. This paper is the utilization of the improved diode and series resistance model to represent the solar cell. The results show: three buses are suitable for high square resistance and fine grid line. Plating technology can improve the absolute conversion efficiency over 17%. In addition, 71 fingers for three buses and 76 fingers for two buses were select in production. It is imagined that the proposed model is very useful for PV professionals who require simple, fast and accurate PV model to design their cells.

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