A Comprehensive Approach for Advancing Plasma Spray Processing Technology

1996 ◽  
Author(s):  
K. Sampath ◽  
E.J. Onesto
Keyword(s):  
Plasma Spray ◽  
Process Model ◽  
Comprehensive Approach ◽  
Processing Technology ◽  
Processing Technologies ◽  
Training Tool ◽  
Integrated Methodology ◽  
Computer Based ◽  
Spray Processing ◽  
Feedstock Material

Abstract A comprehensive approach is presented for facilitating the implementation of advanced plasma spray processing technology in the manufacture, repair, and refurbishment of industrial components. This approach employs an integrated methodology for combining several advanced computer-based methods, including: 1) an interactive multimedia-based education and training tool to effectively store and retrieve plasma spray processing information in a variety of formats; 2) an expert system to select plasma spray feedstock material for a specific coating function; 3) a one-dimensional plasma spray process model that allows simulation of plasma spray processing conditions for identifying operational envelopes for a selected feedstock material; 4) an interface fracture model for identifying appropriate acceptance criteria for reduced cracking along the coating/substrate interface; and 5) a set of computer-based nondestructive test methods for performing quality assurance and control. This comprehensive approach and the integrated methodology provide an advanced engineering tool for the selection, optimization and implementation of specific advances in plasma spray processing technologies. A major outcome is the reduced need for expensive and time-consuming trial-and-error methods in evaluating the application of plasma spray coatings for the manufacture, repair, and refurbishment of specific industrial components. This comprehensive approach and integrated methodology can be extended to include other thermal spray processing technologies as well.

Processing Technology for Extraction of Scandium(III) from Secondary Sources – A Comprehensive Approach

2019 ◽  
pp. 85-113
Author(s):  
Pankaj Kumar Parhi ◽  
Saroj Sekhar Behera ◽  
Debadutta Das ◽  
Pramila Kumari Misra
Keyword(s):  
Comprehensive Approach ◽  
Processing Technology ◽  
Secondary Sources

scholarly journals Impact of Processing Factors on Quality of Frozen Vegetables and Fruits

2020 ◽  
Vol 12 (4) ◽  
pp. 399-420 ◽  
Author(s):  
R. G. M. van der Sman
Keyword(s):  
Mechanical Damage ◽  
Process Intensification ◽  
Processing Technology ◽  
Production Chain ◽  
Processing Technologies ◽  
Biochemical Processes ◽  
Novel Processing ◽  
Vegetables And Fruits ◽  
Processing Steps

Abstract In this paper I review the production of frozen vegetables and fruits from a chain perspective. I argue that the final quality of the frozen product still can be improved via (a) optimization of the complete existing production chain towards quality, and/or (b) introduction of some promising novel processing technology. For this optimization, knowledge is required how all processing steps impact the final quality. Hence, first I review physicochemical and biochemical processes underlying the final quality, such as water holding capacity, ice crystal growth and mechanical damage. Subsequently, I review how each individual processing step impacts the final quality via these fundamental physicochemical and biochemical processes. In this review of processing steps, I also review the potential of novel processing technologies. The results of our literature review are summarized via a causal network, linking processing steps, fundamental physicochemical and biochemical processes, and their correlation with final product quality. I conclude that there is room for optimization of the current production chains via matching processing times with time scales of the fundamental physicochemical and biochemical processes. Regarding novel processing technology, it is concluded in general that they are difficult to implement in the context of existing production chains. I do see the potential for novel processing technology combined with process intensification, incorporating the blanching pretreatment—but which involves quite a change of the production chain.

Fundamentals of SiC-Based Device Processing

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 42-49 ◽  
Author(s):  
M.R. Melloch ◽  
J.A. Cooper ◽  
D.J. Larkin
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Oxidation Rate ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Processing Technology ◽  
Oxide Semiconductor ◽  
Processing Technologies ◽  
Oxidation Rates ◽  
Polysilicon Gate

Since the commercial availability of SiC substrates in 1990, SiC processing technology has advanced rapidly. There have been demonstrations of monolithic digital and analogue integrated circuits, complementary metal-oxide-semiconductor (CMOS) analog integrated circuits, nonvolatile random-access memories, self-aligned polysilicon-gate metal-oxide-semiconductor field-effect transistors (MOSFETs), and buried-channel polysilicon-gate charge-coupled devices (CCDs). In this article, we review processing technologies for SiC.OxidationA beneficial feature of SiC processing technology is that SiC can be thermally oxidized to form SiO2. When a thermal oxide of thickness x is grown, 0.5x of the SiC surface is consumed, and the excess carbon leaves the sample as CO. Shown in Figure 1 are the oxide thicknesses as a function of time for the Si-face and the C-face of 6H-SiC, and for Si. The oxidation rates are considerably lower for SiC than for Si. The oxidation rate of the C-face of 6H-SiC is considerably greater than that of the Si-face. Hornetz et al. have shown that the reason for the slower oxidation rate of the Si-face is due to a 1-nm Si4C4−xO2 (x < 2) layer that forms between the SiC and the SiO2 during oxidation of the Si-face. When oxidizing the Si-face, the Si atoms oxidize first, which inhibits the oxidation of the underlying C atoms that are 0.063 nm below the Si atoms. When oxidizing the C-face, the C atoms readily oxidize first to form CO, with no formation of the Si4C4−xO2 layer for temperatures above 1000°C.

Toward a new era of plasma spray processing

2006 ◽  
Vol 78 (6) ◽  
pp. 1093-1107 ◽  
Author(s):  
Toyonobu Yoshida
Keyword(s):  
Thin Film ◽  
Plasma Spray ◽  
Deposition Process ◽  
New Era ◽  
Materials Engineering ◽  
Global Trend ◽  
Technological Level ◽  
Future Potential ◽  
Spray Processing ◽  
Powder Spraying

The recent global trend of materials R&D is shifting from "monolithic" to "materials system" and from "bulk" to "thin film and coating". It is thus a natural consequence that plasma spray processing, as an affordable and effective thin film and coating technology, is attracting global attention in materials engineering. Unfortunately, however, the current plasma spray technology for thin film and coating seems to not yet reach the sufficient technological level to meet the requirements from the fields where this technique was not applicable in the past. In this context, this paper will point out the disregarded but important issues involved in conventional plasma powder spraying to fit for high technologies and infer the future potential of novel plasma spray processing with the use of extended feedstock like gases, liquids, and various-sized powders. In particular, special attention will be given to recent challenges aiming at a development of a co-deposition process of droplets and vapors, namely, comprehensive plasma spraying.

INTEGRATING USER INTERFACE DEVELOPMENT AND MODERN SOFTWARE DEVELOPMENT

1992 ◽  
Vol 02 (02) ◽  
pp. 227-250 ◽  
Author(s):  
W. DAVID HURLEY
Keyword(s):  
User Interface ◽  
Software Development ◽  
Process Model ◽  
Knowledge Engineering ◽  
Interactive System ◽  
Development Organization ◽  
Computer Based ◽  
Software Engineers ◽  
Model Features

A long-term goal for software engineers is integrating the separate processes of user interface development and modern software development. With emergent CASE technology, software engineers can begin to explore ways to achieve this integration. Exploration involves investigating candidate methodologies that let developers apply different development strategies to different parts of an interactive system. Disciplined long-term investigation requires that the fundamental principles governing each process be fixed and that evolving development methods comprising each process be accommodated. This paper proposes a computer-based process model that fixes the principles and accommodates evolving methods. Model features include a collection of software engineering and knowledge engineering techniques that supports a development organization of human and computer-based agents, a coordination activity that supports opportunistic behavior of developers, a unifying representation that leads to mutually consistent results from developers, and an extendable topology that enhances collaboration among developers while reducing their communications burden.

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