scholarly journals A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application

2006 ◽  
Author(s):  
Shiyong Xie
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride ◽  
Electronic Application

Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

2015 ◽  
Vol 107 (10) ◽  
pp. 103111 ◽  
Author(s):  
Pavan Kumar Kasanaboina ◽  
Estiak Ahmad ◽  
Jia Li ◽  
C. Lewis Reynolds ◽  
Yang Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Core Shell ◽  
Dilute Nitride ◽  
Shell Nanowires

Defects and Surfactant Action of Antimony on GaAs and GaAs1-xNx on GaAs [100] by Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
W. K. Cheah ◽  
W. J. Fan ◽  
S. F. Yoon ◽  
S. Wicaksono ◽  
R. Liu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Related Defect

ABSTRACTLow temperature (4.5K) photoluminescence (PL) measurements of GaAs(N):Sb on GaAs grown by solid source molecular beam epitaxy (MBE) show a Sb-related defect peak at ∼1017nm (1.22eV). The magnitude of the Sb-related impurity PL peak corresponds in intensity with the prominence of the additional two-dimensional [115] high-resolution x-ray diffraction (HRXRD) defect peaks. The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb and a Sb flux ≥ 1.3×10−8 Torr is needed to invoke the surfactant behavior in III-V dilute nitride MBE growth for a growth rate of 1μm/hr.

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

2007 ◽  
Vol 101 (11) ◽  
pp. 114916 ◽  
Author(s):  
David B. Jackrel ◽  
Seth R. Bank ◽  
Homan B. Yuen ◽  
Mark A. Wistey ◽  
James S. Harris ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride
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