Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Download Full-text

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

Physical Review B ◽

10.1103/physrevb.41.12599 ◽

1990 ◽

Vol 41 (18) ◽

pp. 12599-12606 ◽

Cited By ~ 114

Author(s):

O. Brandt ◽

L. Tapfer ◽

R. Cingolani ◽

K. Ploog ◽

M. Hohenstein ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Structural And Optical Properties

Download Full-text

Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-003-0216-x ◽

2003 ◽

Vol 32 (4) ◽

pp. 244-248 ◽

Cited By ~ 5

Author(s):

Guan-Ru Chen ◽

Hao-Hsiung Lin ◽

Jyh-Shyang Wang ◽

Ding-Kang Shih

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Single Quantum ◽

Gas Source

Download Full-text

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00967-8 ◽

2001 ◽

Vol 227-228 ◽

pp. 1000-1004 ◽

Cited By ~ 35

Author(s):

P.B Joyce ◽

T.J Krzyzewski ◽

G.R Bell ◽

T.S Jones ◽

S Malik ◽

...

Keyword(s):

Growth Rate ◽

Quantum Dots ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Size Composition ◽

Rate Effects

Download Full-text

Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

International Journal of Spectroscopy ◽

10.1155/2011/527642 ◽

2011 ◽

Vol 2011 ◽

pp. 1-5

Author(s):

Faouzi Saidi ◽

Mouna Bennour ◽

Lotfi Bouzaïene ◽

Larbi Sfaxi ◽

Hassen Maaref

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth Conditions ◽

High Energy ◽

Biaxial Strain ◽

High Energy Electron ◽

Inas Quantum Dots ◽

Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

Download Full-text