scholarly journals Optical properties of CdO films prepared by DC planar magnetron sputtering

2014 ◽  
pp. 9-12
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Near Infrared ◽  
Infrared Region ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Direct Band ◽  
Near Infrared Region ◽  
Cdo Films

CdOfilms have been produced on glass substrates by DC planar magnetron sputtering technique in Ar and O2 gases 1:4 and distance 6cm between cathode and anode and thickness 174 nm. It is observed from optical properties that the films possess transmittance 80% in visible and near infrared region of spectrum and direct band gap values in the rang 2.31-2.4 e V

Improved Photoelectric Properties of ZnO1-x/Graphene Heterostructures

2018 ◽  
Vol 768 ◽  
pp. 187-192
Author(s):  
Jian Wen ◽  
Xiu Li Fu ◽  
Zhao Xian Liu ◽  
Zhi Jian Peng
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Visible Light ◽  
Near Infrared ◽  
Infrared Region ◽  
Infrared Detection ◽  
Current Gain ◽  
Radio Frequency Magnetron Sputtering ◽  
Photoelectric Properties ◽  
Near Infrared Region

In this work, the photoelectric properties of ZnO1-x/graphene heterostructures were investigated. Such ZnO1-x/graphene heterostructures were constructed from non-stoichiometric zinc oxide (ZnO1-x) film and graphene by first depositing ZnO1-x layer through radio frequency magnetron sputtering onto silicon wafers with SiO2 layer and then transferring graphene via a wet method. It was revealed that such heterostructures could have improved photoelectric properties. Compared with ZnO1-x films, the absorbance of the ZnO1-x/graphene heterostructures in visible and near-infrared region was enhanced; and due to the high conductivity of graphene, the photocurrent was significantly enhanced both in dark and under irradiation of a 700 nm light. By calculating the absolute current gain, it was revealed that the fabricated ZnO1-x/graphene heterostructures would have a higher current gain. Thus, such ZnO1-x/graphene heterostructures would be promisingly applied in visible light to near-infrared detection devices.

Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au

2011 ◽  
Vol 170 ◽  
pp. 135-138 ◽  
Author(s):  
Der Yuh Lin ◽  
Tung Pai Huang ◽  
Fan Lei Wu ◽  
Chih Ming Lin ◽  
Ying Sheng Huang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Region ◽  
Polarization Property ◽  
Strong Polarization ◽  
Doping Effects ◽  
Direct Band ◽  
Polarization Characteristics ◽  
Near Infrared Region ◽  
Excitonic Transitions ◽  
Polarization Dependences

The optical anisotropy properties of rhenium disulphide (ReS2) and Au-doped rhenium disulphide (ReS2:Au) have been investigated by polarization-dependent photoluminescence (PL). Because the excitonic transitions show strong polarization dependences in the near-infrared region, we used polarization-dependent PL measurements in the range between 0° and 180° to characterize the unique polarization property of ReS2 and ReS2:Au, and identify the origin of the excitonic transitions. It was observed that the variation in the amplitude of PL excitonic transitions with different polarization characteristics follows the Malus rule. In comparison with the undoped ReS2, the PL spectra of Au-doped sample show not only the main excitonic transitions near the direct band edge but also some extra transitions owing to the doping effects.

Optical properties of orientated (SN)x-films in the visible and near infrared region

1976 ◽  
Vol 18 (7) ◽  
pp. 791-794 ◽  
Author(s):  
W. Möller ◽  
H.P. Geserich ◽  
L. Pintschovius
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Infrared Region ◽  
Near Infrared Region

scholarly journals Engineering the synthesis procedure for PbS nanosheets with controlled optical properties in the near-infrared region

2019 ◽  
Vol 1410 ◽  
pp. 012019
Author(s):  
T K Kormilina ◽  
I D Skurlov ◽  
S A Cherevkov ◽  
A S Mudrak ◽  
A P Litvin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Infrared Region ◽  
Synthesis Procedure ◽  
Near Infrared Region

Cu2S nanosheets for ultrashort pulse generation in the near-infrared region

Nanoscale ◽  
2019 ◽  
Vol 11 (13) ◽  
pp. 6045-6051 ◽  
Author(s):  
Zhanqiang Hui ◽  
Wenxiong Xu ◽  
Xiaohui Li ◽  
Penglai Guo ◽  
Ying Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ultrashort Pulse ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Infrared Region ◽  
Pulse Generation ◽  
Cuprous Sulfide ◽  
Near Infrared Region ◽  
Er Doped ◽  
Ultrashort Pulse Generation

The nonlinear optical properties of cuprous sulfide have been studied. The successful application in Er-doped fiber laser has proved cuprous sulfide as a novel, promising materials in the field of ultra-fast photonics.

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