Characteristics of Inner-Coil-Type Thin-Film Inductors with no Insulation between Magnetic Films and Conductors.

1993 ◽  
Vol 17 (2) ◽  
pp. 511-516 ◽  
Author(s):  
M. Yamaguchi ◽  
S. Arakawa ◽  
K.I. Arai
Keyword(s):  
2002 ◽  
Vol 239 (1-3) ◽  
pp. 579-581 ◽  
Author(s):  
K.H. Kim ◽  
D.W. Yoo ◽  
J.H. Jeong ◽  
J. Kim ◽  
S.H. Han ◽  
...  

2000 ◽  
Vol 14 (28) ◽  
pp. 3279-3288 ◽  
Author(s):  
YUNSONG ZHOU ◽  
D. L. LIN

Phase diagrams for diluted bulk magnetic alloys and two-component magnetic films are investigated. On the basis of the Ising model for layered structures, we calculate the transition temperature as a function of the relative concentration x by means of the variational cumulant expansion. Both the ferromagnetic and antiferromagnetic interactions are considered and the exchange coupling constants between different atoms are treated as adjustable parameters. Experimental phase diagrams in the Tc-x plane for both La 2 Cu 1-x Zn x O 4 and Sm 2 Fe 14-x Co x Si 2 are qualitatively accounted for, and phase diagrams for a randomly mixed two-component thin film of magnetic alloys are predicted.


2021 ◽  
Vol 871 ◽  
pp. 271-276
Author(s):  
Lin Sha ◽  
Qi Fei Du ◽  
Li Ping Tu

With the widespread use of film transistors, amorphous oxide thin films have excellent transparency and conductivity, stable performance, smooth and smooth surface, easy to etch and large-area preparation, are compatible with existing processes, and do not require subsequent annealing to simplify the process. Process and other advantages have been applied to many fields such as thin film transistors. The principle of the amorphous oxide is basically the same as that of the crystalline state, Magnetron sputtering technology can prepare super-hard films, corrosion-resistant friction films, superconducting films, magnetic films, optical films, and various films with special functions. It is widely used in the field of industrial film preparation. This article focuses on the principle and characteristics of magnetron sputtering technology for electronic materials, the development history of magnetron sputtering technology and its development trend.


2014 ◽  
Vol 70 (a1) ◽  
pp. C148-C148
Author(s):  
Stephen Lister ◽  
Vikash Venkataramana ◽  
Thomas Thomson ◽  
Joachim Kohlbrecher ◽  
Ken Takano ◽  
...  

The study of thin film magnetic systems that are structured on the nanoscale is an area of intense interest. Small-angle neutron scattering is an extremely powerful probe of nanomagnetism in the bulk, but in thin-film systems the experiments are challenging due both to the small scattering volume available and also to scattering from other sources such as the substrate and sample environment. We have demonstrated that such experiments are however possible in magnetic films as thin as 10 nm. A good example to illustrate this is the case of perpendicular magnetic recording media. These materials are found in all modern magnetic hard drives, the data storage technology that continues to be of tremendous commercial and technological importance. These media are advanced functional multilayered materials, containing an active recording layer of only around 10 nm in thickness. This recording layer is compositionally segregated into 8 nm-sized grains of a magnetic CoCrPt alloy separated by a thin oxide shell, typically SiO2. These media have their magnetic moments oriented perpendicular to the plane of the film. Determining the local magnetic structure and reversal behavior is key to understanding the performance of perpendicular media in recording devices. Polarised SANS has proved to be a very effective tool to measure these materials at a sub-10nm length scales. The signal of interest must however also be distinguished from the scattering from other layers in the structure, some of which are also magnetic. We will present a summary of some recent results on recording media, including measurements of the grain-sized dependent switching with and without the presence of an exchange spring. We will also briefly mention experiments that demonstrate the viability of extending this approach to measurement for lithographically defined structures similar to those for application in bit-patterned media, including 2d artificial spin-ice and structurally glassy arrays.


1999 ◽  
Vol 85 (8) ◽  
pp. 4898-4900 ◽  
Author(s):  
Chang-Ho Lee ◽  
Dong-Hoon Shin ◽  
Dong-Hoon Ahn ◽  
Seoung-Eui Nam ◽  
Hyoung-June Kim

1996 ◽  
Vol 429 ◽  
Author(s):  
Fred Roozeboom ◽  
Jaap J. M. Ruigrok ◽  
Wilco Klaassens ◽  
Herbert Kegel ◽  
Manfred Falter ◽  
...  

AbstractA new emerging application area for Rapid Thermal Annealing (RTA) may be in the manufacturing of thin-film recording heads for high-density (hard disk drive, video, audio and data tape) recording. To that end we co-designed a new commercial reactor with an external electromagnet to anneal thin soft-magnetic films (nanocrystalline iron alloys) deposited on ceramic wafers of up to 150 mm diameter. The electromagnet generates a field controllable up to 660 Oe (52.8 kA/m). It is completely homogeneous in direction (i.e. fully parallel field lines) across the entire wafer area. Wafers can be annealed either statically, or while rotating (up to 120 rpm), or in two subsequent heating steps with a 90° wafer rotation in between.Nanocrystalline Fe-Nb-Si-N layers have better soft-magnetic properties after Rapid Thermal Magnetic Annealing (RTMA) in a static magnetic field than after conventional furnace annealing in a static field. Temperature-programmed resistance measurements and Transmission Electron Microscopy (TEM) show that the first nanocrystalline, body-centered cubic iron grains start growing already as of 350 °C from the amorphous as-deposited film, whereas the desired segregation of NbN starts only as of 530°C. RTA can be used to promote the kinetics of the segregation of NbN along the boundaries of nanocrystalline iron nuclei. This prevents the iron grains from further growth: with RTMA the iron alloys show smaller nanocrystalline iron particles (order: 10 nm) as observed by TEM.


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