Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures
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A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.
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2015 ◽
Vol 15
(1)
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pp. 41-48
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2010 ◽
Vol 57
(1)
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pp. 160-163
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1958 ◽
Vol 6
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pp. 499-503
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1980 ◽
Vol 35
(11)
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pp. 1271-1272
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2010 ◽
Vol 6
(S273)
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pp. 333-337
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