Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

Oxide Semiconductor ◽

Tunnel Magnetoresistance

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure

10.7567/jjap.51.04dm02 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DM02 ◽

Cited By ~ 4

Author(s):

Daisuke Suzuki ◽

Masanori Natsui ◽

Tetsuo Endoh ◽

Hideo Ohno ◽

Takahiro Hanyu

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Hybrid Structure ◽

Oxide Semiconductor ◽

Logic Element

Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Electronics Letters ◽

10.1049/ell2.12103 ◽

2021 ◽

Vol 57 (6) ◽

pp. 264-266

Author(s):

Rui Ma ◽

Ahmed Sidi El Valli ◽

Martin Kreißig ◽

Gregory Di Pendina ◽

Florian Protze ◽

...

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spintronic Devices

A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

Applied Physics Express ◽

10.1143/apex.3.013003 ◽

2010 ◽

Vol 3 (1) ◽

pp. 013003 ◽

Cited By ~ 28

Author(s):

Yusuke Shuto ◽

Ryosho Nakane ◽

Wenhong Wang ◽

Hiroaki Sukegawa ◽

Shuu'ichirou Yamamoto ◽

...

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure

10.1143/jjap.51.04dm02 ◽

2012 ◽

Vol 51 ◽

pp. 04DM02 ◽

Cited By ~ 5

Author(s):

Daisuke Suzuki ◽

Masanori Natsui ◽

Tetsuo Endoh ◽

Hideo Ohno ◽

Takahiro Hanyu

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Hybrid Structure ◽

Oxide Semiconductor ◽

Logic Element

The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits

10.1143/jjap.49.04dm06 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DM06

Author(s):

Tetsuo Endoh ◽

Fumitaka Iga ◽

Shoji Ikeda ◽

Katsuya Miura ◽

Jun Hayakawa ◽

...

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Oxide Semiconductor ◽

Metal Line ◽

Semiconductor Circuits

Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process

10.1143/jjap.48.08hf02 ◽

2009 ◽

Vol 48 (8) ◽

pp. 08HF02 ◽

Cited By ~ 1

Author(s):

Dong-Hwan Kim ◽

Jeongyun Lee ◽

Min-Sung Kim ◽

Ken Tokashiki ◽

Kyoungsub Shin ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Voltage Drop ◽

High Density ◽

Oxide Semiconductor ◽

Density Plasma

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Cited By ~ 7

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

Thin Silicon

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Cited By ~ 20

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Cited By ~ 21

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability