scholarly journals Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

2021 ◽  
Vol 8 ◽  
Author(s):  
S. Lagomarsino ◽  
A. M. Flatae ◽  
H. Kambalathmana ◽  
F. Sledz ◽  
L. Hunold ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Thermal Activation ◽  
Single Photon ◽  
Color Centers ◽  
Zero Phonon Line ◽  
Silicon Vacancy ◽  
Sensing Applications ◽  
Strong Luminescence ◽  
Si Ion Implantation

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

scholarly journals Optical properties of silicon-vacancy color centers in diamond created by ion implantation and post-annealing

2018 ◽  
Vol 84 ◽  
pp. 196-203 ◽  
Author(s):  
Stefano Lagomarsino ◽  
Assegid M. Flatae ◽  
Silvio Sciortino ◽  
Federico Gorelli ◽  
Mario Santoro ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Post Annealing

scholarly journals Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jan Fait ◽  
Marián Varga ◽  
Karel Hruška ◽  
Alexander Kromka ◽  
Bohuslav Rezek ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Thin Layer ◽  
Emission Line ◽  
Diamond Surface ◽  
Color Centers ◽  
Spectral Position ◽  
Zero Phonon Line ◽  
Silicon Vacancy ◽  
Leaky Modes ◽  
Sensing Applications

Abstract The controlled extraction of light from diamond optical color centers is essential for their practical prospective applications as single photon sources in quantum communications and as biomedical sensors in biosensing. Photonic crystal (PhC) structures can be employed to enhance the collection efficiency from these centers by directing the extracted light towards the detector. However, PhCs must be fabricated with nanoscale precision, which is extremely challenging to achieve for current materials and nanostructuring technologies. Imperfections inherently lead to spectral mismatch of the extraction (leaky) modes with color center emission lines. Here, we demonstrate a new and simple two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.

Fabrication of Silicon-Vacancy Color Centers in Nanodiamonds by using Si-Ion Implantation

2018 ◽  
Vol 73 (5) ◽  
pp. 661-666 ◽  
Author(s):  
Hyeongkwon Kim ◽  
Hyeyeon Kim ◽  
Jaeyong Lee ◽  
Weon Cheol Lim ◽  
John A. Eliades ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Si Ion Implantation

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Exploring ultrafast single-photon emission of silicon-vacancy color centers in diamond nano-membranes coupled with gold nano-cones

2019 ◽  
Author(s):  
Haritha Kambalathmana ◽  
Assegid Mengistu Flatae ◽  
Stefano Lagomarsino ◽  
Hossam Galal ◽  
Francesco Tantussi ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Color Centers ◽  
Single Photon Emission ◽  
Silicon Vacancy

scholarly journals A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

2019 ◽  
Vol 9 (24) ◽  
pp. 5471 ◽  
Author(s):  
Yuanhui Pan ◽  
Wei Shen ◽  
Shengnan Shen ◽  
Hui Li
Keyword(s):  
Density Functional ◽  
Theoretical Study ◽  
Single Photon ◽  
Color Centers ◽  
Energy Calculation ◽  
Single Photon Source ◽  
Functional Theory ◽  
Silicon Vacancy ◽  
Energetic Stability ◽  
Photon Source

Single neutral silicon-vacancy ( SiV 0 ) color centers under H-, O-, or N-terminated diamond (001) surfaces were investigated using density functional theory. The formation energy calculation indicated that it is generally easier for SiV 0 to be embedded in an O-terminated diamond (001) surface as compared with H- and N-terminated surfaces, which were effected above the fifth C layer. The effects of the surface termination species on inner diamond atoms decay to be negligible below the fifth C layer. The binding energy results indicated that SiV centers exhibited rather high energetic stability once formed. Additionally, it was revealed that these three surface-terminating species had contracting or expanding effects on inner surface atoms. The calculation for density of states showed that the N-terminated diamond (001) surface served as a suitable medium for single SiV 0 to function as a single-photon source.

scholarly journals Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

2007 ◽  
Vol 101 (10) ◽  
pp. 103525 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
M. Yang ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Nanocrystal Size ◽  
Si Nanocrystals ◽  
Si Ion Implantation

scholarly journals Study of color centers in radiation-modified diamonds

2021 ◽  
Vol 2103 (1) ◽  
pp. 012223
Author(s):  
M V Kozlova ◽  
A A Khomich ◽  
R A Khmelnitsky ◽  
A A Averin ◽  
A I Kovalev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Fast Neutron ◽  
Thermal Annealing ◽  
Neutron Irradiation ◽  
Excitation Power ◽  
Temperature Sensing ◽  
Color Centers ◽  
Fast Neutron Irradiation ◽  
Subsequent Thermal Annealing

Abstract We report on the optical properties of He-related color centers created by He-ion implantation and subsequent thermal annealing in natural diamonds, including the temperature (300–700 K) and excitation power (1–1800 kW/cm2)-dependent photoluminescence (PL) measurements. The prospects for the use of He-implanted diamonds for temperature sensing are discussed. The effect of fast neutron irradiation on the optical properties of Si-V color centers in CVD diamonds were also examined.

scholarly journals Front Cover: Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐µm Pinhole (Adv. Quantum Technol. 12/2021)

2021 ◽  
Vol 4 (12) ◽  
pp. 2170121
Author(s):  
Lukas Hunold ◽  
Stefano Lagomarsino ◽  
Assegid M. Flatae ◽  
Haritha Kambalathmana ◽  
Florian Sledz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Color Centers ◽  
Front Cover ◽  
Silicon Vacancy
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