The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties
Tunable complex oxide thin films have generated a lot of interest in recent years due to their potential to become a core technology in the new generation of multiple communications devices. These films are grown via different deposition methods and frequently postprocessed in order to enhance their dielectric properties. This paper discusses an alternative postprocessing technique where complex oxide thin films grown by radio frequency (RF) magnetron sputtering have been treated with an external microwave field instead of a conventional furnace. The treated films and untreated reference film were characterized for their microstructure and dielectric properties. The obtained results indicate a significant reduction in dielectric losses and leakage current in the microwave processed films as opposed to the untreated reference. The results are discussed together with potential additional benefits of the proposed approach.
