scholarly journals M-Center in Neutron-Irradiated 4H-SiC

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1404
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Proton Irradiation ◽  
Deep Level ◽  
Deep Level Defect ◽  
Carbon Vacancy ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M4, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

Effect of fast neutron irradiation induced defects on the metamagnetic transition In Ce(Fe0.96Ru0.04)2

2012 ◽  
Vol 112 (6) ◽  
pp. 063922 ◽  
Author(s):  
C. L. Prajapat ◽  
V. Dube ◽  
A. K. Rajarajan ◽  
S. V. Thakare ◽  
K. C. Jagadeesan ◽  
...  
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Metamagnetic Transition ◽  
Fast Neutron Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study

Vacuum ◽  
2009 ◽  
Vol 84 (1) ◽  
pp. 32-36 ◽  
Author(s):  
I. Capan ◽  
B. Pivac ◽  
I.D. Hawkins ◽  
V.P. Markevich ◽  
A.R. Peaker ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Electrical Characterization of Proton Irradiated n-Type ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
F Danie Auret ◽  
Michael Hayes ◽  
Jackie Nel ◽  
Walter Meyer ◽  
Pieter Johan Janse van Rensburg ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Low Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

ABSTRACTRu Schottky barrier diodes (SBD's) were fabricated on the Zn face of n-type ZnO. These diodes were irradiated with 1.8 MeV at fluences ranging from 1 ´ 1013 cm-2 to 2.4 ´ 1014 cm-2. Capacitance and current (I) deep level transient spectroscopy (DLTS) was used to characterise the irradiation induced defects. Capacitance DLTS showed that proton irradiation introduced a level, Ep1, at 0.52 eV below the conduction band at an introduction rate of 13±1 cm-1. A defect with a very similar DLTS signature was also present in low concentrations in unirradiated ZnO. I-DLTS revealed that this proton irradiation introduced a defect with an energy level at (0.036± 0.004) eV below the conduction band. This defect is clearly distinguishable from a defect with a level at (0.033± 0.004) eV below the conduction band that was present in the unirradiated sample. It is speculated that these shallow level defects are related to zinc interstitials or complexes involving them.

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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