Copper-Based Volumetric Filler Dedicated for Ag Paste for Depositing the Front Electrodes by Printing on Solar Si Cells

In this work we present research results on a new paste NPCuXX (where: NP—new paste, CuXX—component, XX—a modifier consisting of Ni and other important elements) based on a copper composite (CuXX) for fabrication of front electrodes in silicon solar cells. The CuXX composite is obtained by chemical processing of copper powder particles and can be used in two ways: as an additive to commercially available paste or as a base material for a new paste, NPCuXX. The CuXX offers the possibility to exchange up to 30 and 50 wt.% Ag into Cu, which significantly decreases the solar cells material costs, and therefore, the overall solar cell price. Emphasis was placed on a proper mass suitable fabrication process of the CuXX component. The NPCuXX paste has been applied both to conventional cell structures such as aluminum-back surface field (Al-BSF) and passivated emitter and rear contact (PERC), and finally solar cells with front electrodes deposited by screen-printing method were fabricated and characterized by current-voltage techniques. This paper reports the first implementation of the copper volumetric material into a screen print paste used in a high-temperature metallization process to fabricate the front contacts of Si solar cells with a highest fill factor of 77.92 and 77.69% for the abovementioned structures, respectively.

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Back surface cell structures for reducing recombination in CZ silicon solar cells

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) ◽

10.1109/wcpec.1994.519966 ◽

2002 ◽

Cited By ~ 3

Author(s):

R.R. King ◽

K.W. Mitchell ◽

J.M. Gee

Keyword(s):

Solar Cells ◽

Silicon Solar Cells ◽

Back Surface ◽

Surface Cell ◽

Cell Structures

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Effect of Back-Surface Reflectors on the Performance of Strain-Balanced Quantum Well Solar Cells

10.1557/proc-1121-n09-13 ◽

2008 ◽

Author(s):

Jessica Adams ◽

Ravin Ginige ◽

James Connolly ◽

Ian Ballard ◽

Benjamin Browne ◽

...

Keyword(s):

Solar Cells ◽

Quantum Well ◽

Back Surface

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Crystalline Fraction and Doping Concentration Effect on Heterojunction Solar Cells n-Doped μc-Si:H Back Surface Field Layer

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.10242 ◽

2015 ◽

Vol 15 (3) ◽

pp. 2294-2299 ◽

Cited By ~ 2

Author(s):

Sangho Kim ◽

Chonghoon Shin ◽

Nagarajan Balaji ◽

Junsin Yi

Keyword(s):

Solar Cells ◽

Doping Concentration ◽

Concentration Effect ◽

Back Surface ◽

Crystalline Fraction ◽

Back Surface Field ◽

Heterojunction Solar Cells ◽

Field Layer ◽

Surface Field

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Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽

10.3390/molecules26113275 ◽

2021 ◽

Vol 26 (11) ◽

pp. 3275

Author(s):

Devendra KC ◽

Deb Kumar Shah ◽

M. Shaheer Akhtar ◽

Mira Park ◽

Chong Yeal Kim ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Doping Concentration ◽

Carrier Lifetime ◽

Short Circuit ◽

Back Surface ◽

Back Surface Field ◽

Cdte Solar Cell ◽

Cdte Solar Cells ◽

Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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Effects of CsSnxPb1−xI3 Quantum Dots as Interfacial Layer on Photovoltaic Performance of Carbon-Based Perovskite Solar Cells

Nanoscale Research Letters ◽

10.1186/s11671-021-03533-y ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Chi Zhang ◽

Zhiyuan He ◽

Xuanhui Luo ◽

Rangwei Meng ◽

Mengwei Chen ◽

...

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Photovoltaic Performance ◽

Perovskite Solar Cells ◽

Photogenerated Electron ◽

Depletion Region ◽

Band Alignment ◽

Back Surface ◽

The One ◽

Carbon Based

AbstractIn this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn2+ doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron–hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSn0.2Pb0.8I3 quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.

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