scholarly journals Modelling Electron Channeling Contrast Intensity of Stacking Fault and Twin Boundary Using Crystal Thickness Effect

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1696
Author(s):  
Hana Kriaa ◽  
Antoine Guitton ◽  
Nabila Maloufi
Keyword(s):  
Twin Boundary ◽  
Theoretical Approach ◽  
Stacking Fault ◽  
Thickness Effect ◽  
Specimen Thickness ◽  
Crystal Thickness ◽  
Contrast Imaging ◽  
Electron Channeling ◽  
Electron Intensity ◽  
Backscattered Electron

In a scanning electron microscope, the backscattered electron intensity modulations are at the origin of the contrast of like-Kikuchi bands and crystalline defects. The Electron Channeling Contrast Imaging (ECCI) technique is suited for defects characterization at a mesoscale with transmission electron microscopy-like resolution. In order to achieve a better comprehension of ECCI contrasts of twin-boundary and stacking fault, an original theoretical approach based on the dynamical diffraction theory is used. The calculated backscattered electron intensity is explicitly expressed as function of physical and practical parameters controlling the ECCI experiment. Our model allows, first, the study of the specimen thickness effect on the channeling contrast on a perfect crystal, and thus its effect on the formation of like-Kikuchi bands. Then, our theoretical approach is extended to an imperfect crystal containing a planar defect such as twin-boundary and stacking fault, clarifying the intensity oscillations observed in ECC micrographs.

scholarly journals Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

2020 ◽  
Vol 532 ◽  
pp. 125422
Author(s):  
Markus Feifel ◽  
Jens Ohlmann ◽  
Ryan M. France ◽  
David Lackner ◽  
Frank Dimroth
Keyword(s):  
Stacking Fault ◽  
Contrast Imaging ◽  
Electron Channeling

Determination of Crystal Thickness from Relative Transmission Measurements

1975 ◽  
Vol 33 ◽  
pp. 242-243 ◽  
Author(s):  
D. C. Joy ◽  
D. M. Maher
Keyword(s):  
Amorphous Materials ◽  
Accurate Estimate ◽  
Foil Thickness ◽  
Specimen Thickness ◽  
Crystal Thickness ◽  
Crystalline Materials ◽  
Transmission Electron ◽  
Relative Transmission ◽  
History Of ◽  
Electron Intensity

An accurate knowledge of the specimen foil thickness often is required in quantitative transmission electron microscopy. The methods used for thickness determinations of thin crystalline materials (e.g. the trace method, thickness fringe counts and stereoscopic measurements) generally are selected according to the history of the specimen and nature of the microstructure. For amorphous materials a measurement of the relative transmission of electrons I/I0, where I is the transmitted and I0 the incident electron intensity, affords an accurate estimate of the specimen thickness. In this case, for a sufficiently large specimen thickness, I/I0 varies exponentially according to the mass thickness relationship e-μt, where μ is the mass absorption coefficient and t is the specimen thickness. The purpose of this paper is to demonstrate that the thickness of a crystalline specimen also may be determined accurately from a measurement of I/I0, provided that well defined diffracting conditions are used. The results presented here are for silicon.

Thickness and composition determinations from T.E.M. specimens using both x-ray and backscattered electron data

1984 ◽  
Vol 42 ◽  
pp. 576-577
Author(s):  
M.D. Ball ◽  
H. Lagace ◽  
M.C. Thornton
Keyword(s):  
Electron Microscope ◽  
Atomic Number ◽  
Transmission Electron Microscope ◽  
Convenient Method ◽  
Flow Chart ◽  
X Ray ◽  
Intensity Measurements ◽  
Transmission Electron ◽  
Electron Intensity ◽  
Backscattered Electron

The backscattered electron coefficient η for transmission electron microscope specimens depends on both the atomic number Z and the thickness t. Hence for specimens of known atomic number, the thickness can be determined from backscattered electron coefficient measurements. This work describes a simple and convenient method of estimating the thickness and the corrected composition of areas of uncertain atomic number by combining x-ray microanalysis and backscattered electron intensity measurements.The method is best described in terms of the flow chart shown In Figure 1. Having selected a feature of interest, x-ray microanalysis data is recorded and used to estimate the composition. At this stage thickness corrections for absorption and fluorescence are not performed.

Local thickness determination by Electron Energy Loss Spectroscopy

1994 ◽  
Vol 52 ◽  
pp. 944-945
Author(s):  
Suichu Luo ◽  
John R. Dunlap ◽  
Richard W. Williams ◽  
David C. Joy
Keyword(s):  
Energy Loss ◽  
Analytical Electron Microscopy ◽  
Mean Free Path ◽  
Single Scattering ◽  
Specimen Thickness ◽  
Three Dimension ◽  
Angular Correction ◽  
Electron Intensity ◽  
Image Position ◽  
Inelastic Mean Free Path

In analytical electron microscopy, it is often important to know the local thickness of a sample. The conventional method used for measuring specimen thickness by EELS is:where t is the specimen thickness, λi is the total inelastic mean free path, IT is the total intensity in an EEL spectrum, and I0 is the zero loss peak intensity. This is rigorouslycorrect only if the electrons are collected over all scattering angles and all energy losses. However, in most experiments only a fraction of the scattered electrons are collected due to a limited collection semi-angle. To overcome this problem we present a method based on three-dimension Poisson statistics, which takes into account both the inelastic and elastic mixed angular correction.The three-dimension Poisson formula is given by:where I is the unscattered electron intensity; t is the sample thickness; λi and λe are the inelastic and elastic scattering mean free paths; Si (θ) and Se(θ) are normalized single inelastic and elastic angular scattering distributions respectively ; F(E) is the single scattering normalized energy loss distribution; D(E,θ) is the plural scattering distribution,

Quantitative Electron Microscope with imaging plate

1994 ◽  
Vol 52 ◽  
pp. 408-409
Author(s):  
D. Shindo
Keyword(s):  
Electron Microscope ◽  
Dynamic Range ◽  
Processing System ◽  
Digital Data ◽  
Imaging Plate ◽  
Crystal Thickness ◽  
X Ray Diffraction ◽  
Resolution Electron ◽  
Electron Intensity ◽  
Diffraction Patterns

Imaging plate has good properties, i.e., a wide dynamic range and good linearity for the electron intensity. Thus the digital data (2048x1536 pixels, 4096 gray levels in log scale) obtained with the imaging plate can be used for quantification in electron microscopy. By using the image processing system (PIXsysTEM) combined with a main frame (ACOS3900), quantitative analysis of electron diffraction patterns and high-resolution electron microscope (HREM) images has been successfully carried out.In the analysis of HREM images observed with the imaging plate, quantitative comparison between observed intensity and calculated intensity can be carried out by taking into account the experimental parameters such as crystal thickness and defocus value. An example of HREM images of quenched Tl2Ba2Cu1Oy (Tc = 70K) observed with the imaging plate is shown in Figs. 1(b) - (d) comparing with a structure model proposed by x-ray diffraction study of Fig. 1 (a). The image was observed with a JEM-4000EX electron microscope (Cs =1.0 mm).

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

scholarly journals Quantitative misfit dislocation characterization with electron channeling contrast imaging

2021 ◽  
Vol 27 (S1) ◽  
pp. 912-914
Author(s):  
Ari Blumer ◽  
Marzieh Baan ◽  
Zak Blumer ◽  
Jacob Boyer ◽  
Tyler J. Grassman
Keyword(s):  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

scholarly journals Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  
Keyword(s):  
Structural Damage ◽  
Light Emission ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Contrast Imaging ◽  
Force Microscopy ◽  
Electron Channeling ◽  
Microscopy Techniques ◽  
Cathodoluminescence Imaging ◽  
Edge Dislocations

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

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