scholarly journals Quantum Hall Effect across Graphene Grain Boundary

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 8
Author(s):  
Tuan Khanh Chau ◽  
Dongseok Suh ◽  
Haeyong Kang

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.

2012 ◽  
Vol 5 (12) ◽  
pp. 125101 ◽  
Author(s):  
Shinichi Tanabe ◽  
Makoto Takamura ◽  
Yuichi Harada ◽  
Hiroyuki Kageshima ◽  
Hiroki Hibino

2007 ◽  
Vol 21 (02n03) ◽  
pp. 109-113
Author(s):  
JE HUAN KOO ◽  
GUANGSUP CHO

We investigate the integer quantum Hall effect (IQHE) and the fractional quantum Hall effect (FQHE). We derive the quantized Hall resistance of IQHE in the presence of the high magnetic field using the scheme of standing waves by de Broglie matter wave of electron gas confined within a two-dimensional square-type quantum well. Without any modification of electrons and holes, it is shown that FQHE is only a decoupling mode of the Hall resistance by two-band-type of electrons and holes, which are governed by IQHE respectively.


2016 ◽  
Vol 30 (13) ◽  
pp. 1650142
Author(s):  
Babur M. Mirza

A microscopic theory of integer and fractional quantum Hall effects is presented here. In quantum density wave representation of charged particles, it is shown that, in a two-dimensional electron gas coherent structures form under the low temperature and high density conditions. With a sufficiently high applied magnetic field, the combined [Formula: see text] particle quantum density wave exhibits collective periodic oscillations. As a result the corresponding quantum Hall voltage function shows a step-wise change in multiples of the ratio [Formula: see text]. At lower temperatures further subdivisions emerge in the Hall resistance, exhibiting the fractional quantum Hall effect.


Author(s):  
F. Lafont ◽  
R. Ribeiro-Palau ◽  
Z. Han ◽  
A. Cresti ◽  
A. W. Cummings ◽  
...  

2011 ◽  
Vol 99 (23) ◽  
pp. 232110 ◽  
Author(s):  
Tian Shen ◽  
Wei Wu ◽  
Qingkai Yu ◽  
Curt A. Richter ◽  
Randolph Elmquist ◽  
...  

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