scholarly journals Microfabrication of X-ray Optics by Metal Assisted Chemical Etching: A Review

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 589 ◽  
Author(s):  
Lucia Romano ◽  
Marco Stampanoni

High-aspect-ratio silicon micro- and nanostructures are technologically relevant in several applications, such as microelectronics, microelectromechanical systems, sensors, thermoelectric materials, battery anodes, solar cells, photonic devices, and X-ray optics. Microfabrication is usually achieved by dry-etch with reactive ions and KOH based wet-etch, metal assisted chemical etching (MacEtch) is emerging as a new etching technique that allows huge aspect ratio for feature size in the nanoscale. To date, a specialized review of MacEtch that considers both the fundamentals and X-ray optics applications is missing in the literature. This review aims to provide a comprehensive summary including: (i) fundamental mechanism; (ii) basics and roles to perform uniform etching in direction perpendicular to the <100> Si substrate; (iii) several examples of X-ray optics fabricated by MacEtch such as line gratings, circular gratings array, Fresnel zone plates, and other X-ray lenses; (iv) materials and methods for a full fabrication of absorbing gratings and the application in X-ray grating based interferometry; and (v) future perspectives of X-ray optics fabrication. The review provides researchers and engineers with an extensive and updated understanding of the principles and applications of MacEtch as a new technology for X-ray optics fabrication.

2020 ◽  
Vol 5 (5) ◽  
pp. 869-879 ◽  
Author(s):  
Lucia Romano ◽  
Matias Kagias ◽  
Joan Vila-Comamala ◽  
Konstantins Jefimovs ◽  
Li-Ting Tseng ◽  
...  

Gas-MacEtch of Si with a Pt catalyst allows vertical etching nanostructures with an extreme aspect ratio up to 10 000 : 1.


2015 ◽  
Vol 54 (32) ◽  
pp. 9630 ◽  
Author(s):  
Jianpeng Liu ◽  
Jinhai Shao ◽  
Sichao Zhang ◽  
Yaqi Ma ◽  
Nit Taksatorn ◽  
...  

2017 ◽  
Vol 176 ◽  
pp. 6-10 ◽  
Author(s):  
L. Romano ◽  
J. Vila-Comamala ◽  
M. Kagias ◽  
K. Vogelsang ◽  
H. Schift ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 301 ◽  
Author(s):  
Rabia Akan ◽  
Thomas Frisk ◽  
Fabian Lundberg ◽  
Hanna Ohlin ◽  
Ulf Johansson ◽  
...  

Zone plates are diffractive optics commonly used in X-ray microscopes. Here, we present a wet-chemical approach for fabricating high aspect ratio Pd/Si zone plate optics aimed at the hard X-ray regime. A Si zone plate mold is fabricated via metal-assisted chemical etching (MACE) and further metalized with Pd via electroless deposition (ELD). MACE results in vertical Si zones with high aspect ratios. The observed MACE rate with our zone plate design is 700 nm/min. The ELD metallization yields a Pd density of 10.7 g/cm 3 , a value slightly lower than the theoretical density of 12 g/cm 3 . Fabricated zone plates have a grid design, 1:1 line-to-space-ratio, 30 nm outermost zone width, and an aspect ratio of 30:1. At 9 keV X-ray energy, the zone plate device shows a first order diffraction efficiency of 1.9%, measured at the MAX IV NanoMAX beamline. With this work, the possibility is opened to fabricate X-ray zone plates with low-cost etching and metallization methods.


2010 ◽  
Vol 87 (5-8) ◽  
pp. 1052-1056 ◽  
Author(s):  
Sergey Gorelick ◽  
Joan Vila-Comamala ◽  
Vitaliy Guzenko ◽  
Rajmund Mokso ◽  
Marco Stampanoni ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).


2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.


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