scholarly journals Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1322 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Ka-Te Chen ◽  
Pao-Hsun Huang ◽  
Wan-Yu Wu ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Annealing Temperature ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tio2 Films ◽  
Titanium Tetraisopropoxide ◽  
Tio2 Thin Films

In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10−3 cm−1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

A cascade-type electron extraction design for efficient low-bandgap perovskite solar cells based on a conventional structure with suppressed open-circuit voltage loss

2019 ◽  
Vol 3 (3) ◽  
pp. 496-504 ◽  
Author(s):  
Meiyue Liu ◽  
Ziming Chen ◽  
Zhen Chen ◽  
Hin-Lap Yip ◽  
Yong Cao
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Low Bandgap ◽  
Voltage Loss ◽  
Conventional Structure ◽  
Cascade Type ◽  
Electron Extraction

A cascade-type and energy-level-aligned electron transport layer of ZnO/SnO2/C60-SAM is beneficial for suppressed charge recombination and improved charge extraction in low-bandgap perovskite solar cells, resulting in a reduced Voc loss.

Ultra‐Thin Atomic Layer Deposited–Nb 2 O 5 as Electron Transport Layer for Co‐Evaporated MAPbI 3 Planar Perovskite Solar Cells

2020 ◽  
Vol 8 (4) ◽  
pp. 1900878 ◽  
Author(s):  
Anand S. Subbiah ◽  
Arpan K. Dhara ◽  
Neha Mahuli ◽  
Suman Banerjee ◽  
Shaibal Kanti Sarkar
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Transport Layer ◽  
Electron Transport Layer

scholarly journals Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

2019 ◽  
Vol 7 (44) ◽  
pp. 25347-25354 ◽  
Author(s):  
Huiyun Wei ◽  
Jionghua Wu ◽  
Peng Qiu ◽  
Sanjie Liu ◽  
Yingfeng He ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Transport Layer ◽  
Electron Transport Layer

Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.

Reveal the large open-circuit voltage deficit of all-inorganic CsPbIBr2 perovskite solar cells

2021 ◽  
Author(s):  
Ying Hu ◽  
Jiaping Wang ◽  
Peng Zhao ◽  
Zhenhua Lin ◽  
Siyu Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Perovskite Layer ◽  
Excellent Thermal Stability ◽  
Voltage Loss

Abstract Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic-inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V loss) cannot be ignored, especially CsPbIBr2, which limits the improvement of efficiency. To reduce the V loss, one promising solution is the modification of the energy level alignment between perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at perovskite/CTL interface. Therefore, the key issues of minimum V loss and high efficiency of CsPbIBr2-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V oc) is increased from 1.37 V to 1.52 V by replacing SnO2 with ZnO as electron transport layer (ETL) due to more matching conduction band with CsPbIBr2 layer.

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