Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diode property could be co-existent without any implementation of heterogeneous multiple stacks with ~1 μm thick LaOx NPs layer. Current–voltage (I–V) behavior of the LaOx NPs resistive switching (RS) device has shown an evolved current level with memristive behavior and additional rectification functionality with threshold voltage. The concurrent memristor and diode type selector characteristics were examined with electrical stimuli or spikes for the duration of 10–50 ms pulse biases. The pulsed spike increased current levels at a read voltage of +0.2 V sequentially along with ±7 V biases, which have emulated neuromorphic operation of long-term potentiation (LTP). This study can open a new application of rare-earth LaOx NPs as a component of neuromorphic synaptic device.

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Integrated Circuit with Memristor Emulator Array and Neuron Circuits for Biologically Inspired Neuromorphic Pattern Recognition

Journal of Circuits System and Computers ◽

10.1142/s0218126617501833 ◽

2017 ◽

Vol 26 (11) ◽

pp. 1750183 ◽

Cited By ~ 7

Author(s):

Rajeev Ranjan ◽

Pablo Mendoza Ponce ◽

Wolf Lukas Hellweg ◽

Alexandros Kyrmanidis ◽

Lait Abu Saleh ◽

...

Keyword(s):

Pattern Recognition ◽

Integrated Circuit ◽

Long Term Potentiation ◽

Neuromorphic Circuits ◽

Memristive Behavior ◽

Term Potentiation ◽

Wide Range ◽

Application Specific Integrated Circuit ◽

Memristor Emulator

This paper details an application-specific integrated circuit (ASIC) with an array of switched-resistor-based memristors (resistor with memory) and integrate & fire (I & F) neuron circuits for the development of memristor-based pattern recognition. Since real memristors are not commercially available, a compact memristor emulator is needed for device study. The designed ASIC has five memristor emulators with one having a conductance range from 4.88[Formula: see text]ns to 4.99[Formula: see text][Formula: see text]s (200[Formula: see text]k[Formula: see text] to 204.8[Formula: see text]M[Formula: see text]) and other four having conductance ranging from 195[Formula: see text]ns to 190[Formula: see text][Formula: see text]s (5.2[Formula: see text]k[Formula: see text] to 5.12[Formula: see text]M[Formula: see text]). Signal processing has been planned to be off-chip to get the freedom of programmability of a wide range of memristive behavior. This paper introduces the memristor emulator and the realization of synapse functionalities used in neuromorphic circuits such as long term potentiation (LTP), Long Term depression (LTD) and synaptic plasticity. The ASIC has two I & F neuron circuits which are intended to be used in conjunction with memristors in a multiple chip network for pattern recognition. This paper explains the memristor emulator, I & F neuron circuit and a respective neuromorphic system for pattern recognition simulated in LTspice. The ASIC has been fabricated in AMS 350[Formula: see text]nm process.

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