scholarly journals Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1246
Author(s):  
Binbin Zhang ◽  
Yu Luo ◽  
Chaohuang Mai ◽  
Lan Mu ◽  
Miaozi Li ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Root Mean Square Roughness ◽  
Zno Film ◽  
Light Emitting ◽  
Mg Doping ◽  
Mg Doped

An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated that ZnMgO film has an amorphous structure, which is similar to zinc oxide (ZnO) film. Comparison of morphology between ZnO film and ZnMgO film demonstrated that Mg-doped ZnO film remains a high-quality surface (root mean square roughness: 0.86 nm) as smooth as ZnO film. The optical band gap and ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the conduction band of ZnO shifts to a more matched position with InP quantum dot after Mg-doping, resulting in the decrease in turn-on voltage from 2.51 to 2.32 V. In addition, the ratio of irradiation recombination of QLED increases from 7% to 25% using ZnMgO ETL, which can be attributed to reduction in trap state by introducing Mg ions into ZnO lattices. As a result, ZnMgO is a promising material to enhance the performance of inverted InP QLED. This work suggests that ZnMgO has the potential to improve the performance of QLED, which consists of the ITO/ETL/InP QDs/TCTA/MoO3/Al, and Mg-doping strategy is an efficient route to directionally regulate ZnO conduction bands.

High Performance Top-Emission Quantum Dot Light-Emitting Diodes with Mg-Doped ZnO Nanoparticles Used as an Electron Transport Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3747-3752
Author(s):  
Bada Kim ◽  
Dohyeong Lee ◽  
Boram Hwang ◽  
Yebin Eun ◽  
Mi-Young Ha ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Maximum Luminance ◽  
Zno Nps ◽  
Light Emitting ◽  
Mg Doping ◽  
Doped Zno ◽  
Mg Doped

In this paper, we reported superior performance of solution-processed top-emission quantum dot light-emitting diodes (TE-QLEDs) with Mg-doped ZnO nanoparticle (NP) electron transport layer (ETL). The Mg-doped ZnO NPs were synthesized by the sol-gel method. Transmission electron microscopy (TEM) analysis of the Mg-doped ZnO NPs with 0 wt%, 5 wt%, 10 wt%, and 15 wt% Mg-doping concentrations revealed average diameters of 5.86 nm, 5.33 nm, 4.52 nm, and 4.37 nm, respectively. The maximum luminance, the current efficiency, and external quantum efficiency (EQE) were 178,561.8 cd/m2, 56.0 cd/A, and 14.43%, respectively. However, for the best performance of TE-QLED without Mg-doping in the ZnO NPs, the maximum luminance was only 101,523.4 cd/m2, the luminous efficiency was 27.8 cd/A, and the EQE was 6.91%. The improvement of the performance is attributed to the suppression of electron transfer by an increase in the energy barrier between the cathode and Mg-doped ZnO NP ETL and the reduction in the Hall mobility of electron with increasing the Mg-doping in the ZnO NPs, resulting in the enhanced charge balance in the quantum dot (QD) emitting layer (EML).

A highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers

2018 ◽  
Vol 6 (30) ◽  
pp. 8099-8104 ◽  
Author(s):  
Lixi Wang ◽  
Jiangyong Pan ◽  
Jianping Qian ◽  
Wei Lei ◽  
Yuanjun Wu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Driving Voltage ◽  
Light Emitting ◽  
White Emission ◽  
Highly Efficient

A highly efficient QLED achieving white emission at a low driving voltage is obtained by employing Zn0.95Mg0.05O as the electron transport layer.

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

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