scholarly journals Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 472 ◽  
Author(s):  
Byoung-Soo Choi ◽  
Jimin Lee ◽  
Sang-Hwan Kim ◽  
Seunghyuk Chang ◽  
JongHo Park ◽  
...  
Keyword(s):  
Geometric Model ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Color Pattern ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Color Information ◽  
Depth Extraction ◽  
Measurement Results

A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However, in a CIS camera using OPA technique, apertures are integrated as left-offset pixel apertures (LOPAs) and right-offset pixel apertures (ROPAs). A color pattern is built, comprising LOPA, blue, red, green, and ROPA pixels. The disparity information can be acquired from the LOPA and ROPA channels. Both disparity information and two-dimensional (2D) color information can be simultaneously acquired from the LOPA, blue, red, green, and ROPA channels. A geometric model of the OPA technique is constructed to estimate the disparity of the image, and the measurement results are compared with the estimated results. Depth extraction is thus achieved by a single CIS using the OPA technique, which can be easily adapted to commercial CIS cameras.

scholarly journals Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor

2010 ◽  
Vol 26 (12) ◽  
pp. 1215-1217 ◽  
Author(s):  
Karthikeyan KANDASAMY ◽  
Mohana MARIMUTHU ◽  
Gun Yong SUNG ◽  
Chang Geun AHN ◽  
Sanghyo KIM
Keyword(s):  
Metal Oxide ◽  
Point Of Care ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Label Free

scholarly journals A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3642 ◽  
Author(s):  
Yutaka Hirose ◽  
Shinzo Koyama ◽  
Motonori Ishii ◽  
Shigeru Saitou ◽  
Masato Takemoto ◽  
...  
Keyword(s):  
Near Infrared ◽  
Time Of Flight ◽  
Depth Map ◽  
Complementary Metal Oxide Semiconductor ◽  
Laser Pulses ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Pixel Circuit

We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (<50 ns) and repetitive (6 kHz) laser pulses are illuminated through a diffusing optics. By globally gating the VAPD, each pulse is counted in the in-pixel counter enabling extraction of sub-photon level signal. Depth map imaging with a 10 cm lateral resolution is realized from 1 m to 250 m range by synthesizing subranges images of photon counts. Advantages and limitation of an in-pixel circuit are described. The developed CIS is expected to supersede insufficient resolution of the conventional light detection and ranging (LiDAR) systems and the short range of indirect CIS TOF.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range
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