scholarly journals The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5301 ◽  
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
M. Saif Islam
Keyword(s):  
Thermal Oxidation ◽  
High Temperatures ◽  
Silver Film ◽  
Electrical Characterization ◽  
Catalyst Layer ◽  
Ultraviolet Photodetector ◽  
Transient Time ◽  
Thin Silver Film ◽  
Silver Catalysts

We investigated the effect of silver catalysts to enhance the growth of Ga2O3 nanowires. The growth of Ga2O3 nanowires on a P+-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga2O3 nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga2O3 nanowires can be grown directly on the surface of silicon. The Ga2O3 nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.

scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

Electrical characterization of granular materials and mixtures at high temperatures

1991 ◽  
Vol 2 (3) ◽  
pp. 225-235 ◽  
Author(s):  
C.A.P. Zevenhoven ◽  
P.J. Droppert ◽  
R.H.M. Van De Leur
Keyword(s):  
Granular Materials ◽  
High Temperatures ◽  
Electrical Characterization

On the growth and electrical characterization of CuO nanowires by thermal oxidation

2009 ◽  
Vol 106 (3) ◽  
pp. 034303 ◽  
Author(s):  
A. M. B. Gonçalves ◽  
L. C. Campos ◽  
A. S. Ferlauto ◽  
R. G. Lacerda
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characterization ◽  
Cuo Nanowires

scholarly journals Realization and Characterization of Aligned Silicon Nanowire Array With Thin Silver Film

2011 ◽  
Vol 3 (3) ◽  
pp. 617-626 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Kai-Chung Wu ◽  
Yen-Ting Pan
Keyword(s):  
Silver Film ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Thin Silver Film ◽  
Silicon Nanowire Array

scholarly journals Construction and testing of a system for the electrical characterization of ceramic thermistors at low temperatures

Cerâmica ◽  
2014 ◽  
Vol 60 (353) ◽  
pp. 96-101 ◽  
Author(s):  
F. C. S. Luz ◽  
S. A. Pianaro ◽  
C. E. Yurk ◽  
G. Capobianco ◽  
A. J. Zara ◽  
...  
Keyword(s):  
High Temperatures ◽  
High Precision ◽  
Low Temperatures ◽  
Room Temperature ◽  
Low Cost ◽  
Electrical Characterization ◽  
Cost System ◽  
Materials Research ◽  
Excellent Reproducibility

A high-precision and low cost system was built for the electrical characterization of ceramic thermistors at low temperatures, using components readily available in materials research laboratories. The system presented excellent reproducibility in the electrical characterization of NTC ceramic sensors from -75 ºC (195 K) to 23 ºC (296 K). The behavior of the NTC sensor was comparable to that of commercial thermistors only below room temperature (α = -3.2%/K), demonstrating the importance of fully characterizing these materials at both low and high temperatures.

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