scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

Synthesis and Characterization of High Quality InN Nanowires and Nano-networks

2007 ◽  
Vol 1058 ◽  
Author(s):  
Zhihua Cai ◽  
Samir Garzon ◽  
Richard A. Webb ◽  
Goutam Koley
Keyword(s):  
Fast Rate ◽  
Three Dimensional ◽  
Catalyst Layer ◽  
Direct Reaction ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Dimensional Growth ◽  
Quartz Tube Furnace

ABSTRACTHigh quality InN nanowires have been synthesized in a horizontal quartz-tube furnace through direct reaction between metallic Indium and Ammonia using Nitrogen as the carrier gas. Thin film of Au on SiO2/Si substrate has been used as the catalyst layer, facilitating vapor-liquid-solid growth of the nanostructures. The nanowires were grown at a very fast rate of up to 30 μm/hr. Smooth and horizontal nanowire growth was achieved only with nanoscale catalyst patterns, while large area catalyst coverage resulted in uncontrolled and three-dimensional growth. The InN nanowires, which were usually covered with a thin shell layer of In2O3, grew along [110] direction, with overall diameters 20 - 60 nm and lengths 5 - 15 μm. The synthesized nanowires bent spontaneously or got deflected from other nanowires at multiples of 30 degrees forming nano-networks. The catalyst particles for the NWs were found mostly at the sides of the NW apex which helped them to bend spontaneously or get deflected from other NWs at angles which were multiples of 30 degrees. The NW based FETs with a back-gated configuration have already been investigated. The gate-bias dependent mobility of the NWs ranged from 55 cm2/Vs to 220 cm2/Vs, and their carrier concentration was ∼1018 cm−3.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

scholarly journals Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
A. R. Heyd ◽  
S. A. Alterovitz ◽  
E. T. Croke
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Alloy Composition ◽  
Compressive Strain ◽  
Energy Shift ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

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