scholarly journals A Class-J Power Amplifier Implementation for Ultrasound Device Applications

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2273 ◽  
Author(s):  
Kiheum You ◽  
Seung-Hwan Kim ◽  
Hojong Choi

In ultrasonic systems, power amplifiers are one of the most important electronic components used to supply output voltages to ultrasonic devices. If ultrasonic devices have low sensitivity and limited maximum allowable voltages, it can be quite challenging to detect the echo signal in the ultrasonic system itself. Therefore, the class-J power amplifier, which can generate high output power with high efficiency, is proposed for such ultrasonic device applications. The class-J power amplifier developed has a power efficiency of 63.91% and a gain of 28.16 dB at 25 MHz and 13.52 dBm input. The pulse-echo measurement method was used to verify the performance of the electronic components used in the ultrasonic system. The echo signal appearing with the discharged high voltage signal was measured. The amplitude of the first echo signal in the measured echo signal spectrum was 4.4 V and the total-harmonic-distortion (THD), including the fundamental signal and the second harmonic, was 22.35%. The amplitude of the second echo signal was 1.08 V, and the THD, including the fundamental signal and the second harmonic, was 12.45%. These results confirm that a class-J power amplifier can supply a very high output echo signal to an ultrasonic device.

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1312 ◽  
Author(s):  
Chen Jin ◽  
Yuan Gao ◽  
Wei Chen ◽  
Jianhua Huang ◽  
Zhiyu Wang ◽  
...  

This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2.


2017 ◽  
Vol 27 (12) ◽  
pp. 1149-1151 ◽  
Author(s):  
Qi Cai ◽  
Wenquan Che ◽  
Kaixue Ma ◽  
Liming Gu

Author(s):  
P. Colantonio ◽  
F. Giannini ◽  
R. Giofre ◽  
E. Limiti ◽  
A. Serino ◽  
...  

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