scholarly journals Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Sensors ◽  
2020 ◽  
Vol 20 (14) ◽  
pp. 4010
Author(s):  
Alberto Ghirri ◽  
Samuele Cornia ◽  
Marco Affronte

Detectors of microwave photons find applications in different fields ranging from security to cosmology. Due to the intrinsic difficulties related to the detection of vanishingly small energy quanta ℏ ω , significant portions of the microwave electromagnetic spectrum are still uncovered by suitable techniques. No prevailing technology has clearly emerged yet, although different solutions have been tested in different contexts. Here, we focus on semiconductor quantum dots, which feature wide tunability by external gate voltages and scalability for large architectures. We discuss possible pathways for the development of microwave photon detectors based on photon-assisted tunneling in semiconducting double quantum dot circuits. In particular, we consider implementations based on either broadband transmission lines or resonant cavities, and we discuss how developments in charge sensing techniques and hybrid architectures may be beneficial for the development of efficient photon detectors in the microwave range.

Author(s):  
Tsung-Yeh Yang ◽  
Samaresh Das ◽  
Thierry Ferrus ◽  
Aleksey Andreev ◽  
David A. Williams

2013 ◽  
Vol 25 (34) ◽  
pp. 345301
Author(s):  
S M Huang ◽  
A O Badrutdinov ◽  
K Kono ◽  
K Ono

2012 ◽  
Vol 100 (4) ◽  
pp. 043508 ◽  
Author(s):  
C. Payette ◽  
K. Wang ◽  
P. J. Koppinen ◽  
Y. Dovzhenko ◽  
J. C. Sturm ◽  
...  

2012 ◽  
Vol 100 (25) ◽  
pp. 253508 ◽  
Author(s):  
M. Jung ◽  
M. D. Schroer ◽  
K. D. Petersson ◽  
J. R. Petta

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


2021 ◽  
Vol 104 (3) ◽  
Author(s):  
Andrea Secchi ◽  
Laura Bellentani ◽  
Andrea Bertoni ◽  
Filippo Troiani

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