scholarly journals THE MEASUREMENT OF THERMAL PARAMETERS BY CHANGING FREQUENCY OF EMBEDDED RING OSCILLATOR

2021 ◽  
Vol 63 (1) ◽  
pp. 82-90
Author(s):  
Iaroslav G. Tetenkin ◽  
◽  
Viacheslav A. Sergeev ◽  
Keyword(s):  
Integrated Circuits ◽  
Thermal Characteristics ◽  
Simple Algorithm ◽  
Numerical Differentiation ◽  
Thermal Parameters ◽  
Ring Oscillator ◽  
Equivalent Circuits ◽  
Digital Integrated Circuits ◽  
Software Complex ◽  
Transient Thermal

The article describes a brief analysis of linear thermal models of digital integrated circuits (DIC) and algorithms for determining the parameters of thermal equivalent circuits of DIC-based on transient thermal characteristics (TTC). It distinguishes the difficulties in implementing the algorithm for determining the thermal parameters of the DIC-based on the method of structure functions according to the JESD51-14 document and describes a new method for measuring the FPGA TTC by changing the frequency of a ring oscillator embedded in the FPGA logic elements. It also considers the hardware-software complex used for measuring the thermal parameters of FPGAs and proposes a simple algorithm for calculating the thermal parameters of FPGAs based on the analysis of the FPGA TTC using methods of numerical differentiation. The specified algorithm for calculating thermal parameters has been tested on the example of FPGA TTC EPM240T100C5 and Lattice M4A5-64/32.

HEMT for RF Circuits

2015 ◽  
pp. 399-418
Author(s):  
Balwant Raj ◽  
Sukhleen Bindra Narang
Keyword(s):  
Integrated Circuits ◽  
Analytical Techniques ◽  
Compound Semiconductors ◽  
Rf Circuits ◽  
Equivalent Circuits ◽  
Small Signal ◽  
Digital Integrated Circuits ◽  
Microwave Transistors ◽  
Crucial Step ◽  
Gan Hemts

In this chapter, III-V compound semiconductors MESFET, HBT, and HEMT are described, including papers which report major achievements of the HEMT technologies in the fields of microwave, millimeter-wave, and digital Integrated Circuits (ICs). The important aspects of device physics, small-signal equivalent circuits for GaAs, and GaN-based HEMT are discussed. The authors present a comparative analysis of different analytical modeling techniques and show that the differences reflect the physical and technology differences of the tested microwave transistors. The purpose of this chapter is to facilitate the choice of the most appropriate strategy for each particular case. For that, the authors present a brief but thorough comparative study of analytical techniques developed for modeling different types of advanced microwave transistors: GaAs HEMTs, GaN HEMTs. The chapter shows that a crucial step for a successful modeling is to adapt accurately the small-signal equivalent circuit topology.

scholarly journals Determination of transient thermal characteristics for thermal electric behavioral models of integrated circuits

2020 ◽  
Vol 9 (3) ◽  
pp. 933-942
Author(s):  
Drakin A. Yu ◽  
Potapov L. A. ◽  
Shkolin A. N.
Keyword(s):  
Integrated Circuits ◽  
Least Squares Method ◽  
Thermal Characteristic ◽  
Thermal Characteristics ◽  
Structural Function ◽  
Behavioral Models ◽  
Marquardt Algorithm ◽  
Thermoelectric Model ◽  
Transient Thermal

In the current study, it was tried to describe a method for determining thermal characteristics of integrated micro-circuits to identify thermal parameters of multidisciplinary (thermal-electric) behavioral models. The problem is solved on the example of high-frequency pulse voltage converters. A solution was proposed to refine the minimum structure of the thermoelectric model based on an iterative least squares method using the Levenberg-Marquardt  algorithm, as well as a graph of the spectral den-sity of time constants. This made it possible to reduce the influence of the filtering factor in the  deconvolution operation when building a thermal model using the structural function of the thermal characteristic transition. Also, the results obtained can be used to build integrated circuits (IC) behavioral models, taking into account the thermal processes occurring in them.

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