Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra

2020 ◽  
Vol 59 (3) ◽  
pp. 038001
Author(s):  
Abu Bashar Mohammad Hamidul Islam ◽  
Jong-In Shim ◽  
Dong-Soo Shin
Keyword(s):  
Quantum Wells ◽  
Sapphire Substrates ◽  
Near Ultraviolet ◽  
Piezoelectric Field ◽  
Electroreflectance Spectroscopy

Effects of Patterned Sapphire Substrates on Piezoelectric Field in Blue-Emitting InGaN Multiple Quantum Wells

2010 ◽  
Vol 31 (8) ◽  
pp. 842-844 ◽  
Author(s):  
Sang-Mook Kim ◽  
Hwa Sub Oh ◽  
Jong Hyeob Baek ◽  
Kwang-Ho Lee ◽  
Gun Young Jung ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Piezoelectric Field ◽  
Patterned Sapphire Substrates

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 251908 ◽  
Author(s):  
M. Motyka ◽  
R. Kudrawiec ◽  
G. Cywiński ◽  
M. Siekacz ◽  
C. Skierbiszewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Difference ◽  
Electroreflectance Spectroscopy

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

2010 ◽  
Vol 4 (8-9) ◽  
pp. 221-223 ◽  
Author(s):  
Jae-Ho Song ◽  
Yanqun Dong ◽  
Ho-Jong Kim ◽  
Byung-Jun Ahn ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Control ◽  
Piezoelectric Field
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