Effect of growth temperature and ethanol flow rate on synthesis of single-walled carbon nanotube by alcohol catalytic chemical vapor deposition using Ir catalyst in hot-wall reactor

ABSTRACTGrowth of single-walled carbon nanotube (SWCNT) was achieved by an alcohol catalytic chemical vapor deposition (CVD) mechanism that was conducted in a high vacuum using Ru catalysts. By optimizing the ethanol pressure, SWCNTs can grow in a wide range of temperature between 500 °C and 900 °C. Both the yield and crystalline quality of SWCNTs reached their maxima at 700 °C. Significantly, the SWCNT growth was achieved even at 450 °C, which was much lower than the growth temperatures that were required for SWCNT growth using Ru catalysts previously. Raman measurements exhibited that the diameter distribution of the SWCNTs that were grown at 450 °C was quite narrow and (11, 4) nanotubes were dominant. The observations of transmission electron microscope (TEM) suggested that the size of the Ru particles were larger than the diameter of SWCNT. Such a relation was similar to the relation observed in the growth of SWCNTs using Pt catalysts.

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Growth of single-walled carbon nanotube at a low temperature by alcohol catalytic chemical vapor deposition using Ru catalysts

MRS Advances ◽

10.1557/adv.2018.4 ◽

2018 ◽

Vol 3 (1-2) ◽

pp. 53-59 ◽

Cited By ~ 1

Author(s):

Takayuki Fujii ◽

Takuya Okada ◽

Takahiro Saida ◽

Shigeya Naritsuka ◽

Takahiro Maruyama

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Vapor Deposition ◽

High Vacuum ◽

Chemical Vapor ◽

Single Walled Carbon Nanotube ◽

Ru Catalysts ◽

Catalytic Chemical Vapor Deposition ◽

Single Walled Carbon ◽

Wide Range

ABSTRACTGrowth of single-walled carbon nanotube (SWCNT) was achieved by an alcohol catalytic chemical vapor deposition (CVD) mechanism that was conducted in a high vacuum using Ru catalysts. By optimizing the ethanol pressure, SWCNTs can grow in a wide range of temperature between 500 °C and 900 °C. Both the yield and crystalline quality of SWCNTs reached their maxima at 700 °C. Significantly, the SWCNT growth was achieved even at 450 °C, which was much lower than the growth temperatures that were required for SWCNT growth using Ru catalysts previously. Raman measurements exhibited that the diameter distribution of the SWCNTs that were grown at 450 °C was quite narrow and (11, 4) nanotubes were dominant. The observations of transmission electron microscope (TEM) suggested that the size of the Ru particles were larger than the diameter of SWCNT. Such a relation was similar to the relation observed in the growth of SWCNTs using Pt catalysts.

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Single-walled carbon nanotube growth with non-iron-group “catalysts” by chemical vapor deposition

Nano Research ◽

10.1007/s12274-009-9082-z ◽

2009 ◽

Vol 2 (10) ◽

pp. 793-799 ◽

Cited By ~ 56

Author(s):

Yoshikazu Homma ◽

Huaping Liu ◽

Daisuke Takagi ◽

Yoshihiro Kobayashi

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Vapor Deposition ◽

Chemical Vapor ◽

Iron Group ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Carbon Nanotube Growth ◽

Nanotube Growth

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Optimization of Super-Long CNT Forests Growth on Conductive Substrate by Water Assisted CVD

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.496-500.536 ◽

2014 ◽

Vol 496-500 ◽

pp. 536-540

Author(s):

Peng Bo Wang ◽

De Yang Xu ◽

Li Ning Sun

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Optimum Condition ◽

Flow Rate ◽

Growth Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Conductive Substrate ◽

Vertically Aligned

Water assisted chemical vapor deposition (CVD) is used widely to synthesize super long, vertically aligned, densely packed carbon nanotube (CNT) forests. Various water assisted CVD parameters give the important influence on the quality of CNT forests. In this paper, several main parameters in water assisted CVD are optimized, such as the flow rate of H2, the content of water and growth temperature. Furthermore, growth on the conductive substrate is also studied by water assisted CVD. Under optimum condition with 10 minutes growth, the length of CNT forests could be 815 μm on silicon substrate and 369 μm on conductive substrate.

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