Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy

AbstractGaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

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Determination of Energy Dependence of Capture Cross Section at Trap Levels by Isothermal Capacitance Transient Spectroscopy: Application to the Gap States in N-Type a-Si:H

Japanese Journal of Applied Physics ◽

10.7567/jjaps.21s1.447 ◽

1982 ◽

Vol 21 (S1) ◽

pp. 447

Author(s):

Hideyo Okushi ◽

Yozo Tokumaru ◽

Hiroshi Kawai ◽

Satoshi Yamasaki ◽

Hidetoshi Oheda ◽

...

Keyword(s):

Energy Dependence ◽

Cross Section ◽

Capture Cross Section ◽

Capture Cross ◽

Transient Spectroscopy ◽

Gap States ◽

Capacitance Transient ◽

Isothermal Capacitance Transient Spectroscopy ◽

Trap Levels

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Measured and calculated variation of the photoionization cross section ratio for argon from 0 to 0.50 eV above the 2Po32,12 photoionization thresholds

Chemical Physics Letters ◽

10.1016/0009-2614(78)80394-7 ◽

1978 ◽

Vol 53 (1) ◽

pp. 79-81 ◽

Cited By ~ 2

Author(s):

W.B. Peatman ◽

Dan Dill

Keyword(s):

Cross Section ◽

Photoionization Cross Section ◽

Cross Section Ratio ◽

Section Ratio

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Interpretation of The a-Si:H DLTS and ICTS Experimental Data

MRS Proceedings ◽

10.1557/proc-70-161 ◽

1986 ◽

Vol 70 ◽

Author(s):

Ru-Qi Han ◽

K. L. Ngai ◽

J. Ruvalds

Keyword(s):

Cross Section ◽

Relaxation Function ◽

Capture Cross Section ◽

Coupling Model ◽

Energy Scale ◽

Electronic Density ◽

Transient Spectroscopy ◽

Capacitance Transient ◽

Isothermal Capacitance Transient Spectroscopy ◽

Additional Prediction

ABSTRACTThe isothermal capacitance transient spectroscopy (ICTS) data of a- Si:H is consistently analyzed in terms of a relaxation function with a fractional exponential time decay of the form φ(t)=exp[-(t/τ*)λ] with λ≅0.8. The anomalous variation of the effective relaxation time τ* (and hence that of the attempt-to-escape frequency ν* and the capture cross section σ* observed by Okushi and coworkers) with energy and temperature is shown to follow an additional prediction of the time dependent relaxation rate coupling model developed by Ngai and coworkers for relaxations in many complex systems. A modified energy scale is extended from the ICTS analysis which brings its electronic density of states structure in closer agreement with results obtained by DLTS experiments.

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