Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
2002 ◽  
Vol 17 (6) ◽  
pp. 1529-1535 ◽  
Author(s):  
Naoki Ohashi ◽  
Junzo Tanaka ◽  
Takeshi Ohgaki ◽  
Hajime Haneda ◽  
Mio Ozawa ◽  
...  

Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.


1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L714-L716 ◽  
Author(s):  
Takao Maeda ◽  
Sakae Meguro ◽  
Masasuke Takata

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