Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation

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Takayoshi SHIMURA ◽  
Heiji WATANABE
1990 ◽  
Vol 137 (3) ◽  
pp. 225 ◽  
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J.-E. Chen ◽  
C.L. Lee ◽  
W.-Z. Shen
Keyword(s):  

2020 ◽  
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Ronald Yusef Costam ◽  
Xiannan Wang ◽  
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...  

2016 ◽  
Author(s):  
Jennifer A. Axler ◽  
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1984 ◽  
Vol 20 (7) ◽  
pp. 298 ◽  
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D.P. Vu ◽  
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