Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
1990 ◽
Vol 137
(3)
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pp. 225
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Keyword(s):
2009 ◽
Vol E92-A
(4)
◽
pp. 1031-1038
2017 ◽
Vol E100.A
(12)
◽
pp. 2764-2775
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2018 ◽
Vol 109
(7)
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pp. 673-676
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