scholarly journals Dendrobium Modeling in Batik Pattern Generation by using Random Walk and Lindenmayer System

2019 ◽  
Vol 14 (7) ◽  
pp. 2103-2111
Author(s):  
Purba Daru Kusuma
Keyword(s):  
Random Walk ◽  
Pattern Generation ◽  
Lindenmayer System

Elements of the Random Walk

2004 ◽  
Author(s):  
Joseph Rudnick ◽  
George Gaspari
Keyword(s):  
Random Walk

CUBIC [001] TWIST CSL GRAIN BOUNDARIES STUDY BY MEANS OF RANDOM WALK

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-67-C1-69
Author(s):  
P. ARGYRAKIS ◽  
E. G. DONI ◽  
TH. SARIKOUDIS ◽  
A. HAIRIE ◽  
G. L. BLERIS
Keyword(s):  
Random Walk ◽  
Grain Boundaries

Random walk to graphene

2011 ◽  
Vol 181 (12) ◽  
pp. 1284 ◽  
Author(s):  
Andrei K. Geim
Keyword(s):  
Random Walk

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

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