scholarly journals Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

2020 ◽  
Vol 11 ◽  
pp. 1361-1370
Author(s):  
Qi Wang ◽  
Meng-Ting Chen ◽  
Antoni Franco-Cañellas ◽  
Bin Shen ◽  
Thomas Geiger ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Standing Waves ◽  
Low Energy ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Structural And Electronic Properties ◽  
Low Energy Electron ◽  
Shed Light

We studied the structural and electronic properties of 2,3,9,10-tetrafluoropentacene (F4PEN) on Ag(111) via X-ray standing waves (XSW), low-energy electron diffraction (LEED) as well as ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS). XSW revealed that the adsorption distances of F4PEN in (sub)monolayers on Ag(111) were 3.00 Å for carbon atoms and 3.05 Å for fluorine atoms. The F4PEN monolayer was essentially lying on Ag(111), and multilayers adopted π-stacking. Our study shed light not only on the F4PEN–Ag(111) interface but also on the fundamental adsorption behavior of fluorinated pentacene derivatives on metals in the context of interface energetics and growth mode.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

Fluorine Atom Addition to the Diamond (111) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Andrew Freedman ◽  
Gary N. Robinson ◽  
Charter D. Stinespring
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Fluorine Atom ◽  
Low Energy ◽  
Diamond Surface ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Atomic Fluorine ◽  
Low Energy Electron ◽  
Diffraction Patterns

ABSTRACTDiamond (111) surfaces with the dehydrogenerated 2×1 reconstruction have been exposed to a beam of atomic fluorine at 300 K. The uptake of fluorine, as measured using X-ray photoelectron spectroscopy, is quite efficient and saturates at a coverage of less than a monolayer. Low energy electron diffraction patterns indicate that fluorine termination of the diamond surface produces a lxi bulk-like reconstruction in contrast to the disordered surface produced on the (100) surface.

S-Passivated InP Surfaces Prepared by (NH4)2S Treatments

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Tao ◽  
A. Yelon ◽  
E. Sacher ◽  
Z.H. Lu ◽  
M.J. Graham
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Low Energy ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Sulfide Solution ◽  
Thermal And Chemical Stability

ABSTRACTS-terminated InP(100) surfaces which are chemically clean and stable were obtained by sulfide solution treatments. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to investigate the thermal and chemical stability of the surfaces. Schottky diodes based on S-passivated InP(100) wafers were used as test devices tostudy the surface electrical properties.

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